Lineal Energy of Proton in Silicon by a Microdosimetry Simulation
Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE. The SEE, however, should be related to energy deposition of each stochastic e...
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doaj-7f0f81af32b64da79140b418c36fb90f2021-01-27T00:00:55ZengMDPI AGApplied Sciences2076-34172021-01-01111113111310.3390/app11031113Lineal Energy of Proton in Silicon by a Microdosimetry SimulationYueh Chiang0Cher Ming Tan1Chuan-Jong Tung2Chung-Chi Lee3Tsi-Chian Chao4Department of Medical Imaging and Radiological Sciences, College of Medicine, Chang Gung University, Kwei-Shan, Tao-Yuan 333, TaiwanCenter for Reliability Sciences and Technologies, Chang Gung University, Kwei-Shan, Tao-Yuan 333, TaiwanDepartment of Medical Imaging and Radiological Sciences, College of Medicine, Chang Gung University, Kwei-Shan, Tao-Yuan 333, TaiwanDepartment of Medical Imaging and Radiological Sciences, College of Medicine, Chang Gung University, Kwei-Shan, Tao-Yuan 333, TaiwanDepartment of Medical Imaging and Radiological Sciences, College of Medicine, Chang Gung University, Kwei-Shan, Tao-Yuan 333, TaiwanSingle event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE. The SEE, however, should be related to energy deposition of each stochastic event, but not LET which is a non-stochastic quantity. Instead, microdosimetry, which uses a lineal calculation of energy lost per step for each specific track, should be used to replace LET to predict microelectronic failure from SEEs. Monte Carlo simulation is used for the demonstration, and there are several parameters needed to optimise for SEE simulation, such as the target size, physical models and scoring techniques. We also show the thickness of the sensitive volume, which also correspond to the size of a device, will change the spectra of lineal energy. With a more comprehensive Monte Carlo simulation performed in this work, we also show and explain the differences in our results and the reported results such as those from Hiemstra et al. which are commonly used in semiconductor industry for the prediction of SEE in devices.https://www.mdpi.com/2076-3417/11/3/1113single event effectMonte Carlo simulationmicrodosimetrylinear energy transferlineal energy |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yueh Chiang Cher Ming Tan Chuan-Jong Tung Chung-Chi Lee Tsi-Chian Chao |
spellingShingle |
Yueh Chiang Cher Ming Tan Chuan-Jong Tung Chung-Chi Lee Tsi-Chian Chao Lineal Energy of Proton in Silicon by a Microdosimetry Simulation Applied Sciences single event effect Monte Carlo simulation microdosimetry linear energy transfer lineal energy |
author_facet |
Yueh Chiang Cher Ming Tan Chuan-Jong Tung Chung-Chi Lee Tsi-Chian Chao |
author_sort |
Yueh Chiang |
title |
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation |
title_short |
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation |
title_full |
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation |
title_fullStr |
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation |
title_full_unstemmed |
Lineal Energy of Proton in Silicon by a Microdosimetry Simulation |
title_sort |
lineal energy of proton in silicon by a microdosimetry simulation |
publisher |
MDPI AG |
series |
Applied Sciences |
issn |
2076-3417 |
publishDate |
2021-01-01 |
description |
Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE. The SEE, however, should be related to energy deposition of each stochastic event, but not LET which is a non-stochastic quantity. Instead, microdosimetry, which uses a lineal calculation of energy lost per step for each specific track, should be used to replace LET to predict microelectronic failure from SEEs. Monte Carlo simulation is used for the demonstration, and there are several parameters needed to optimise for SEE simulation, such as the target size, physical models and scoring techniques. We also show the thickness of the sensitive volume, which also correspond to the size of a device, will change the spectra of lineal energy. With a more comprehensive Monte Carlo simulation performed in this work, we also show and explain the differences in our results and the reported results such as those from Hiemstra et al. which are commonly used in semiconductor industry for the prediction of SEE in devices. |
topic |
single event effect Monte Carlo simulation microdosimetry linear energy transfer lineal energy |
url |
https://www.mdpi.com/2076-3417/11/3/1113 |
work_keys_str_mv |
AT yuehchiang linealenergyofprotoninsiliconbyamicrodosimetrysimulation AT chermingtan linealenergyofprotoninsiliconbyamicrodosimetrysimulation AT chuanjongtung linealenergyofprotoninsiliconbyamicrodosimetrysimulation AT chungchilee linealenergyofprotoninsiliconbyamicrodosimetrysimulation AT tsichianchao linealenergyofprotoninsiliconbyamicrodosimetrysimulation |
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1724322176150011904 |