Non-Volatile Transistor Memory with a Polypeptide Dielectric
Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show...
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doaj-7fa8d44f84be4baba683acef71cc679a2020-11-25T01:45:51ZengMDPI AGMolecules1420-30492020-01-0125349910.3390/molecules25030499molecules25030499Non-Volatile Transistor Memory with a Polypeptide DielectricLijuan Liang0Wenjuan He1Rong Cao2Xianfu Wei3Sei Uemura4Toshihide Kamata5Kazuki Nakamura6Changshuai Ding7Xuying Liu8Norihisa Kobayashi9Beijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanDepartment of Image & Materials Science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanSchool of Materials Science and Engineering, the Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Materials Science and Engineering, the Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, ChinaDepartment of Image & Materials Science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanOrganic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics.https://www.mdpi.com/1420-3049/25/3/499organic nonvolatile transistor memorypolypeptide derivativespolymer dielectricmolecular alignment |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Lijuan Liang Wenjuan He Rong Cao Xianfu Wei Sei Uemura Toshihide Kamata Kazuki Nakamura Changshuai Ding Xuying Liu Norihisa Kobayashi |
spellingShingle |
Lijuan Liang Wenjuan He Rong Cao Xianfu Wei Sei Uemura Toshihide Kamata Kazuki Nakamura Changshuai Ding Xuying Liu Norihisa Kobayashi Non-Volatile Transistor Memory with a Polypeptide Dielectric Molecules organic nonvolatile transistor memory polypeptide derivatives polymer dielectric molecular alignment |
author_facet |
Lijuan Liang Wenjuan He Rong Cao Xianfu Wei Sei Uemura Toshihide Kamata Kazuki Nakamura Changshuai Ding Xuying Liu Norihisa Kobayashi |
author_sort |
Lijuan Liang |
title |
Non-Volatile Transistor Memory with a Polypeptide Dielectric |
title_short |
Non-Volatile Transistor Memory with a Polypeptide Dielectric |
title_full |
Non-Volatile Transistor Memory with a Polypeptide Dielectric |
title_fullStr |
Non-Volatile Transistor Memory with a Polypeptide Dielectric |
title_full_unstemmed |
Non-Volatile Transistor Memory with a Polypeptide Dielectric |
title_sort |
non-volatile transistor memory with a polypeptide dielectric |
publisher |
MDPI AG |
series |
Molecules |
issn |
1420-3049 |
publishDate |
2020-01-01 |
description |
Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (γ-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics. |
topic |
organic nonvolatile transistor memory polypeptide derivatives polymer dielectric molecular alignment |
url |
https://www.mdpi.com/1420-3049/25/3/499 |
work_keys_str_mv |
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