Non-Volatile Transistor Memory with a Polypeptide Dielectric

Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (&#947;-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show...

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Main Authors: Lijuan Liang, Wenjuan He, Rong Cao, Xianfu Wei, Sei Uemura, Toshihide Kamata, Kazuki Nakamura, Changshuai Ding, Xuying Liu, Norihisa Kobayashi
Format: Article
Language:English
Published: MDPI AG 2020-01-01
Series:Molecules
Subjects:
Online Access:https://www.mdpi.com/1420-3049/25/3/499
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spelling doaj-7fa8d44f84be4baba683acef71cc679a2020-11-25T01:45:51ZengMDPI AGMolecules1420-30492020-01-0125349910.3390/molecules25030499molecules25030499Non-Volatile Transistor Memory with a Polypeptide DielectricLijuan Liang0Wenjuan He1Rong Cao2Xianfu Wei3Sei Uemura4Toshihide Kamata5Kazuki Nakamura6Changshuai Ding7Xuying Liu8Norihisa Kobayashi9Beijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaBeijing Institute of Graphic Communication, Beijing 102600, ChinaFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanFlexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 5, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, JapanDepartment of Image &amp; Materials Science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanSchool of Materials Science and Engineering, the Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, ChinaSchool of Materials Science and Engineering, the Key Laboratory of Material Processing and Mold of Ministry of Education, Henan Key Laboratory of Advanced Nylon Materials and Application, Zhengzhou University, Zhengzhou 450001, ChinaDepartment of Image &amp; Materials Science, Graduate School of Advanced Integration Science, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, JapanOrganic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (&#947;-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics.https://www.mdpi.com/1420-3049/25/3/499organic nonvolatile transistor memorypolypeptide derivativespolymer dielectricmolecular alignment
collection DOAJ
language English
format Article
sources DOAJ
author Lijuan Liang
Wenjuan He
Rong Cao
Xianfu Wei
Sei Uemura
Toshihide Kamata
Kazuki Nakamura
Changshuai Ding
Xuying Liu
Norihisa Kobayashi
spellingShingle Lijuan Liang
Wenjuan He
Rong Cao
Xianfu Wei
Sei Uemura
Toshihide Kamata
Kazuki Nakamura
Changshuai Ding
Xuying Liu
Norihisa Kobayashi
Non-Volatile Transistor Memory with a Polypeptide Dielectric
Molecules
organic nonvolatile transistor memory
polypeptide derivatives
polymer dielectric
molecular alignment
author_facet Lijuan Liang
Wenjuan He
Rong Cao
Xianfu Wei
Sei Uemura
Toshihide Kamata
Kazuki Nakamura
Changshuai Ding
Xuying Liu
Norihisa Kobayashi
author_sort Lijuan Liang
title Non-Volatile Transistor Memory with a Polypeptide Dielectric
title_short Non-Volatile Transistor Memory with a Polypeptide Dielectric
title_full Non-Volatile Transistor Memory with a Polypeptide Dielectric
title_fullStr Non-Volatile Transistor Memory with a Polypeptide Dielectric
title_full_unstemmed Non-Volatile Transistor Memory with a Polypeptide Dielectric
title_sort non-volatile transistor memory with a polypeptide dielectric
publisher MDPI AG
series Molecules
issn 1420-3049
publishDate 2020-01-01
description Organic nonvolatile transistor memory with synthetic polypeptide derivatives as dielectric was fabricated by a solution process. When only poly (&#947;-benzyl-<span style="font-variant: small-caps;">l</span>-glutamate) (PBLG) was used as dielectric, the device did not show obvious hysteresis in transfer curves. However, PBLG blended with PMMA led to a remarkable increase in memory window up to 20 V. The device performance was observed to remarkably depend on the blend ratio. This study suggests the crystal structure and the molecular alignment significantly affect the electrical performance in transistor-type memory devices, thereby provides an alternative to prepare nonvolatile memory with polymer dielectrics.
topic organic nonvolatile transistor memory
polypeptide derivatives
polymer dielectric
molecular alignment
url https://www.mdpi.com/1420-3049/25/3/499
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