Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions

Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated....

Full description

Bibliographic Details
Main Authors: Mingling Sun, Takahide Kubota, Shigeki Takahashi, Yoshiaki Kawato, Yoshiaki Sonobe, Koki Takanashi
Format: Article
Language:English
Published: AIP Publishing LLC 2018-05-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5007766
id doaj-80416f5b9abc48529050b509c0d1967e
record_format Article
spelling doaj-80416f5b9abc48529050b509c0d1967e2020-11-24T21:07:29ZengAIP Publishing LLCAIP Advances2158-32262018-05-0185055902055902-510.1063/1.5007766068891ADVBuffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctionsMingling Sun0Takahide Kubota1Shigeki Takahashi2Yoshiaki Kawato3Yoshiaki Sonobe4Koki Takanashi5Institute for Materials Research, Tohoku University, Sendai 980-8577, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanSamsung Research Institute Japan, Yokohama 230-0027, JapanSamsung Research Institute Japan, Yokohama 230-0027, JapanSamsung Research Institute Japan, Yokohama 230-0027, JapanInstitute for Materials Research, Tohoku University, Sendai 980-8577, JapanBuffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.http://dx.doi.org/10.1063/1.5007766
collection DOAJ
language English
format Article
sources DOAJ
author Mingling Sun
Takahide Kubota
Shigeki Takahashi
Yoshiaki Kawato
Yoshiaki Sonobe
Koki Takanashi
spellingShingle Mingling Sun
Takahide Kubota
Shigeki Takahashi
Yoshiaki Kawato
Yoshiaki Sonobe
Koki Takanashi
Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
AIP Advances
author_facet Mingling Sun
Takahide Kubota
Shigeki Takahashi
Yoshiaki Kawato
Yoshiaki Sonobe
Koki Takanashi
author_sort Mingling Sun
title Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
title_short Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
title_full Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
title_fullStr Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
title_full_unstemmed Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
title_sort buffer layer dependence of magnetoresistance effects in co2fe0.4mn0.6si/mgo/co50fe50 tunnel junctions
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2018-05-01
description Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated. A maximum TMR ratio of 136% was observed in the Ru buffer layer sample with a 30-nm-thick CFMS layer. TMR ratios drastically degraded for the CFMS thickness of 0.8 nm, and the values were 26% for Cr buffer layer and less than 1% for Pd and Ru buffer layers. From the annealing temperature dependence of the TMR ratios, amounts of interdiffusion and effects from the lattice mismatch were discussed.
url http://dx.doi.org/10.1063/1.5007766
work_keys_str_mv AT minglingsun bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
AT takahidekubota bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
AT shigekitakahashi bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
AT yoshiakikawato bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
AT yoshiakisonobe bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
AT kokitakanashi bufferlayerdependenceofmagnetoresistanceeffectsinco2fe04mn06simgoco50fe50tunneljunctions
_version_ 1716762701089210368

Similar Items