Buffer layer dependence of magnetoresistance effects in Co2Fe0.4Mn0.6Si/MgO/Co50Fe50 tunnel junctions
Buffer layer dependence of tunnel magnetoresistance (TMR) effects was investigated in Co2Fe0.4Mn0.6Si (CFMS)/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). Pd, Ru and Cr were selected for the buffer layer materials, and MTJs with three different CFMS thicknesses (30, 5, and 0.8 nm) were fabricated....
Main Authors: | Mingling Sun, Takahide Kubota, Shigeki Takahashi, Yoshiaki Kawato, Yoshiaki Sonobe, Koki Takanashi |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2018-05-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5007766 |
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