An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dim...

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Bibliographic Details
Main Authors: Ruitao Chen, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, Zhiyu Wang
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Electronics
Subjects:
X-band
GaN
power amplifier
MMIC
Online Access:http://www.mdpi.com/2079-9292/8/1/99
id doaj-805c16d9b7c944679dac9c9a8546b05c
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spelling doaj-805c16d9b7c944679dac9c9a8546b05c2020-11-25T00:45:59ZengMDPI AGElectronics2079-92922019-01-01819910.3390/electronics8010099electronics8010099An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance ModelRuitao Chen0Ruchun Li1Shouli Zhou2Shi Chen3Jianhua Huang4Zhiyu Wang5College of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, ChinaCollege of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, ChinaCollege of Information Engineering, Zhejiang University of Technology, Hangzhou 310023, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaSchool of Aeronautics and Astronautics, Zhejiang University, Hangzhou 310027, ChinaThis paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.http://www.mdpi.com/2079-9292/8/1/99X-bandGaNpower amplifierMMIC
collection DOAJ
language English
format Article
sources DOAJ
author Ruitao Chen
Ruchun Li
Shouli Zhou
Shi Chen
Jianhua Huang
Zhiyu Wang
spellingShingle Ruitao Chen
Ruchun Li
Shouli Zhou
Shi Chen
Jianhua Huang
Zhiyu Wang
An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
Electronics
X-band
GaN
power amplifier
MMIC
author_facet Ruitao Chen
Ruchun Li
Shouli Zhou
Shi Chen
Jianhua Huang
Zhiyu Wang
author_sort Ruitao Chen
title An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
title_short An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
title_full An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
title_fullStr An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
title_full_unstemmed An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model
title_sort x-band 40 w power amplifier gan mmic design by using equivalent output impedance model
publisher MDPI AG
series Electronics
issn 2079-9292
publishDate 2019-01-01
description This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.
topic X-band
GaN
power amplifier
MMIC
url http://www.mdpi.com/2079-9292/8/1/99
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AT shichen anxband40wpoweramplifierganmmicdesignbyusingequivalentoutputimpedancemodel
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