Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

Assessment of Linear, Hexagonal, and Octagonal Cell Topologies for 650 V 4H-SiC Inversion-Channel Planar-Gate Power JBSFETs Fabricated With 27 nm Gate Oxide Thickness

A 27 nm gate oxide thickness has been successfully used for manufacturing high performance 650V 4H-SiC planar-gate, inversion-channel power JBSFETs in a 6-inch commercial foundry with three (Linear, Hexagonal, and Octagonal) cell topologies. The 27 nm gate oxide thickness allows operation of these J...

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Bibliographic Details
Main Authors: Aditi Agarwal, Kijeong Han, B. J. Baliga
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Silicon carbide
4H-SiC
inversion
JBSFET
cell topology
linear
Online Access:https://ieeexplore.ieee.org/document/9270278/

Internet

https://ieeexplore.ieee.org/document/9270278/

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