Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor
In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabric...
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doaj-83963f8446f748898877645aa4ce8f212021-07-01T00:38:03ZengMDPI AGSensors1424-82202021-06-01214213421310.3390/s21124213Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect TransistorSeong-Kun Cho0Won-Ju Cho1Department of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, KoreaDepartment of Electronic Materials Engineering, Kwangwoon University, 20, Gwangun-ro, Nowon-gu, Seoul 01897, KoreaIn this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl<sub>2</sub>, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.https://www.mdpi.com/1424-8220/21/12/4213sodium ion sensorsilicon nanowiredual-gate field-effect transistorsodium-selective membraneextended gate |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Seong-Kun Cho Won-Ju Cho |
spellingShingle |
Seong-Kun Cho Won-Ju Cho Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor Sensors sodium ion sensor silicon nanowire dual-gate field-effect transistor sodium-selective membrane extended gate |
author_facet |
Seong-Kun Cho Won-Ju Cho |
author_sort |
Seong-Kun Cho |
title |
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor |
title_short |
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor |
title_full |
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor |
title_fullStr |
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor |
title_full_unstemmed |
Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor |
title_sort |
highly sensitive and selective sodium ion sensor based on silicon nanowire dual gate field-effect transistor |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2021-06-01 |
description |
In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl<sub>2</sub>, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood. |
topic |
sodium ion sensor silicon nanowire dual-gate field-effect transistor sodium-selective membrane extended gate |
url |
https://www.mdpi.com/1424-8220/21/12/4213 |
work_keys_str_mv |
AT seongkuncho highlysensitiveandselectivesodiumionsensorbasedonsiliconnanowiredualgatefieldeffecttransistor AT wonjucho highlysensitiveandselectivesodiumionsensorbasedonsiliconnanowiredualgatefieldeffecttransistor |
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