Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems
With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Q<sub>rr</sub> and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage syste...
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MDPI AG
2020-11-01
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| Series: | Energies |
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| Online Access: | https://www.mdpi.com/1996-1073/13/23/6297 |
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doaj-83cc2fef41744b648784d988d25fc4ab2020-11-30T00:00:44ZengMDPI AGEnergies1996-10732020-11-01136297629710.3390/en13236297Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage SystemsNguyen-Nghia Do0Bing-Siang Huang1Nhat-Truong Phan2Tan-Tung Nguyen3Jian-Hong Wu4Yu-Chen Liu5Huang-Jen Chiu6Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanDepartment of Electrical Engineering; National ILAN University, Yilan 260, TaiwanDepartment of Electronic and Computer Engineering, National Taiwan University of Science and Technology, Taipei 10607, TaiwanWith the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Q<sub>rr</sub> and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985.https://www.mdpi.com/1996-1073/13/23/6297totem-pole power factor correctionenergy storage systems (ESS)digital controlgallium nitride (GaN)-basedcurrent harmonic distortion mitigationefficiency and power quality improvement |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Nguyen-Nghia Do Bing-Siang Huang Nhat-Truong Phan Tan-Tung Nguyen Jian-Hong Wu Yu-Chen Liu Huang-Jen Chiu |
| spellingShingle |
Nguyen-Nghia Do Bing-Siang Huang Nhat-Truong Phan Tan-Tung Nguyen Jian-Hong Wu Yu-Chen Liu Huang-Jen Chiu Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems Energies totem-pole power factor correction energy storage systems (ESS) digital control gallium nitride (GaN)-based current harmonic distortion mitigation efficiency and power quality improvement |
| author_facet |
Nguyen-Nghia Do Bing-Siang Huang Nhat-Truong Phan Tan-Tung Nguyen Jian-Hong Wu Yu-Chen Liu Huang-Jen Chiu |
| author_sort |
Nguyen-Nghia Do |
| title |
Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems |
| title_short |
Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems |
| title_full |
Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems |
| title_fullStr |
Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems |
| title_full_unstemmed |
Design and Implementation of a Control Method for GaN-based Totem-Pole Boost-type PFC Rectifier in Energy Storage Systems |
| title_sort |
design and implementation of a control method for gan-based totem-pole boost-type pfc rectifier in energy storage systems |
| publisher |
MDPI AG |
| series |
Energies |
| issn |
1996-1073 |
| publishDate |
2020-11-01 |
| description |
With the unceasing advancement of wide-bandgap (WBG) semiconductor technology, the minimal reverse-recovery charge Q<sub>rr</sub> and other more powerful natures of WBG transistors enable totem-pole bridgeless power factor correction to become a dominant solution for energy storage systems (ESS). This paper focuses on the design and implementation of a control structure for a totem-pole boost PFC with newfangled enhancement-mode gallium nitride field-effect transistors (eGaN FETs), not only to simplify the control implementation but also to achieve high power quality and efficiency. The converter is designed to convert a 90–264-VAC input to a 385-VDC output for a 2.6-kW output power. Lastly, to validate the methodology, an experimental prototype is characterized and fabricated. The uttermost efficiency at 230 VAC reaches 99.14%. The lowest total harmonic distortion in the current (ITHD) at high line condition (230 V) attains 1.52% while the power factor gains 0.9985. |
| topic |
totem-pole power factor correction energy storage systems (ESS) digital control gallium nitride (GaN)-based current harmonic distortion mitigation efficiency and power quality improvement |
| url |
https://www.mdpi.com/1996-1073/13/23/6297 |
| work_keys_str_mv |
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