Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation

Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between c...

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Main Authors: Zhihua Shen, Qiaoning Li, Xiao Wang, Jinshou Tian, Shengli Wu
Format: Article
Language:English
Published: MDPI AG 2021-06-01
Series:Micromachines
Subjects:
Online Access:https://www.mdpi.com/2072-666X/12/7/729
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spelling doaj-84c8a518fb894d4bab64cb6201079e3d2021-07-23T13:54:27ZengMDPI AGMicromachines2072-666X2021-06-011272972910.3390/mi12070729Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature OperationZhihua Shen0Qiaoning Li1Xiao Wang2Jinshou Tian3Shengli Wu4School of Electronics and Information Engineering, Nantong Vocational University, Nantong 226007, ChinaSchool of Electronics and Information Engineering, Nantong Vocational University, Nantong 226007, ChinaSchool of Electronic Information and Artificial Intelligence, Shaanxi University of Science and Technology, Xi’an 710049, ChinaState Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics of CAS, Xi’an 710119, ChinaKey Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an 710049, ChinaVacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.https://www.mdpi.com/2072-666X/12/7/729finite integration technique (FIT)thermionic emissionnanoscale vacuum diodespace-charge limited (SCL) current
collection DOAJ
language English
format Article
sources DOAJ
author Zhihua Shen
Qiaoning Li
Xiao Wang
Jinshou Tian
Shengli Wu
spellingShingle Zhihua Shen
Qiaoning Li
Xiao Wang
Jinshou Tian
Shengli Wu
Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
Micromachines
finite integration technique (FIT)
thermionic emission
nanoscale vacuum diode
space-charge limited (SCL) current
author_facet Zhihua Shen
Qiaoning Li
Xiao Wang
Jinshou Tian
Shengli Wu
author_sort Zhihua Shen
title Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
title_short Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
title_full Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
title_fullStr Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
title_full_unstemmed Nanoscale Vacuum Diode Based on Thermionic Emission for High Temperature Operation
title_sort nanoscale vacuum diode based on thermionic emission for high temperature operation
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2021-06-01
description Vacuum diodes, based on field emission mechanisms, demonstrate a superior performance in high-temperature operations compared to solid-state devices. However, when considering low operating voltage and continuous miniaturization, the cathode is usually made into a tip structure and the gap between cathode and anode is reduced to a nanoscale. This greatly increases the difficulty of preparation and makes it difficult to ensure fabrication consistency. Here, a metal-insulator-semiconductor (MIS) structural nanoscale vacuum diode, based on thermionic emission, was numerically studied. The results indicate that this device can operate at a stable level in a wide range of temperatures, at around 600 degrees Kelvin above 260 K at 0.2 V voltage bias. Moreover, unlike the conventional vacuum diodes working in field emission regime where the emission current is extremely sensitive to the gap-width between the cathode and the anode, the emission current of the proposed diode shows a weak correlation to the gap-width. These features make this diode a promising alternative to vacuum electronics for large-scale production and harsh environmental applications.
topic finite integration technique (FIT)
thermionic emission
nanoscale vacuum diode
space-charge limited (SCL) current
url https://www.mdpi.com/2072-666X/12/7/729
work_keys_str_mv AT zhihuashen nanoscalevacuumdiodebasedonthermionicemissionforhightemperatureoperation
AT qiaoningli nanoscalevacuumdiodebasedonthermionicemissionforhightemperatureoperation
AT xiaowang nanoscalevacuumdiodebasedonthermionicemissionforhightemperatureoperation
AT jinshoutian nanoscalevacuumdiodebasedonthermionicemissionforhightemperatureoperation
AT shengliwu nanoscalevacuumdiodebasedonthermionicemissionforhightemperatureoperation
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