The MMIC design of GaAs bi-phase voltage variable attenuator
A 13～16 GHz bi-phase voltage variable attenuator(VVA) based on 0.25 μm gallium arsenide pseudomorphic high electron mobility transistors(GaAs pHEMT) process is presented. Balanced structure that adopt in this circuit provides less input output return loss. A cascade of T-attenuator and Pi-attenuator...
| Main Authors: | , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2019-04-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000100192 |