On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact...

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Bibliographic Details
Main Authors:	Luping Li, Yonghui Zhang, Shu Xu, Wengang Bi, Zi-Hui Zhang, Hao-Chung Kuo
Format:	Article
Language:	English
Published:	MDPI AG 2017-10-01
Series:	Materials
Subjects:	III-nitride semiconductor multiple quantum well light-emitting diode hole injection efficiency external quantum efficiency internal quantum efficiency
Online Access:	https://www.mdpi.com/1996-1944/10/10/1221

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