Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening

A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vapor deposition. Further, Polydimethylsiloxane (PDMS...

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Main Authors: Muhammad Ali Johar, Mostafa Afifi Hassan, Aadil Waseem, Jun-Seok Ha, June Key Lee, Sang-Wan Ryu
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Series:Nanomaterials
Subjects:
Online Access:http://www.mdpi.com/2079-4991/8/6/437
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spelling doaj-87de10180d7c411184e41fb20729df192020-11-24T21:37:58ZengMDPI AGNanomaterials2079-49912018-06-018643710.3390/nano8060437nano8060437Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal ScreeningMuhammad Ali Johar0Mostafa Afifi Hassan1Aadil Waseem2Jun-Seok Ha3June Key Lee4Sang-Wan Ryu5Department of Physics, Chonnam National University, Gwangju 61186, KoreaDepartment of Physics, Chonnam National University, Gwangju 61186, KoreaDepartment of Physics, Chonnam National University, Gwangju 61186, KoreaOptoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, KoreaOptoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, KoreaDepartment of Physics, Chonnam National University, Gwangju 61186, KoreaA piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vapor deposition. Further, Polydimethylsiloxane (PDMS) was coated on nanowire-arrays then PDMS matrix embedded with GaN nanowire-arrays was transferred on Si-rubber substrate. The piezoelectric performance of nanowire-based flexible PNG was measured, while the device was actuated using a cyclic stretching-releasing agitation mechanism that was driven by a linear motor. The piezoelectric output was measured as a function of actuation frequency ranging from 1 Hz to 10 Hz and a linear tendency was observed for piezoelectric output current, while the output voltages remained constant. A maximum of piezoelectric open circuit voltages and short circuit current were measured 15.4 V and 85.6 nA, respectively. In order to evaluate the feasibility of our flexible PNG for real application, a long term stability test was performed for 20,000 cycles and the device performance was degraded by less than 18%. The underlying reason for the high piezoelectric output was attributed to the reduced free carriers inside nanowires due to surface Fermi-level pinning and insulating metal-dielectric-semiconductor interface, respectively; the former reduced the free carrier screening radially while latter reduced longitudinally. The flexibility and the high aspect ratio of GaN nanowire were the responsible factors for higher stability. Such higher piezoelectric output and the novel design make our device more promising for the diverse range of real applications.http://www.mdpi.com/2079-4991/8/6/437GaN nanowiresnanogeneratorpiezoelectricityflexible electronicsfree-carrier screening
collection DOAJ
language English
format Article
sources DOAJ
author Muhammad Ali Johar
Mostafa Afifi Hassan
Aadil Waseem
Jun-Seok Ha
June Key Lee
Sang-Wan Ryu
spellingShingle Muhammad Ali Johar
Mostafa Afifi Hassan
Aadil Waseem
Jun-Seok Ha
June Key Lee
Sang-Wan Ryu
Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
Nanomaterials
GaN nanowires
nanogenerator
piezoelectricity
flexible electronics
free-carrier screening
author_facet Muhammad Ali Johar
Mostafa Afifi Hassan
Aadil Waseem
Jun-Seok Ha
June Key Lee
Sang-Wan Ryu
author_sort Muhammad Ali Johar
title Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
title_short Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
title_full Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
title_fullStr Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
title_full_unstemmed Stable and High Piezoelectric Output of GaN Nanowire-Based Lead-Free Piezoelectric Nanogenerator by Suppression of Internal Screening
title_sort stable and high piezoelectric output of gan nanowire-based lead-free piezoelectric nanogenerator by suppression of internal screening
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2018-06-01
description A piezoelectric nanogenerator (PNG) that is based on c-axis GaN nanowires is fabricated on flexible substrate. In this regard, c-axis GaN nanowires were grown on GaN substrate using the vapor-liquid-solid (VLS) technique by metal organic chemical vapor deposition. Further, Polydimethylsiloxane (PDMS) was coated on nanowire-arrays then PDMS matrix embedded with GaN nanowire-arrays was transferred on Si-rubber substrate. The piezoelectric performance of nanowire-based flexible PNG was measured, while the device was actuated using a cyclic stretching-releasing agitation mechanism that was driven by a linear motor. The piezoelectric output was measured as a function of actuation frequency ranging from 1 Hz to 10 Hz and a linear tendency was observed for piezoelectric output current, while the output voltages remained constant. A maximum of piezoelectric open circuit voltages and short circuit current were measured 15.4 V and 85.6 nA, respectively. In order to evaluate the feasibility of our flexible PNG for real application, a long term stability test was performed for 20,000 cycles and the device performance was degraded by less than 18%. The underlying reason for the high piezoelectric output was attributed to the reduced free carriers inside nanowires due to surface Fermi-level pinning and insulating metal-dielectric-semiconductor interface, respectively; the former reduced the free carrier screening radially while latter reduced longitudinally. The flexibility and the high aspect ratio of GaN nanowire were the responsible factors for higher stability. Such higher piezoelectric output and the novel design make our device more promising for the diverse range of real applications.
topic GaN nanowires
nanogenerator
piezoelectricity
flexible electronics
free-carrier screening
url http://www.mdpi.com/2079-4991/8/6/437
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