Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap

Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap

Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional syste...

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Main Authors: Dong-Hwan Choi, Seung Mi Lee, Du-Won Jeong, Jeong-O Lee, Dong Han Ha, Myung-Ho Bae, Ju-Jin Kim
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Molecules
Subjects:
van-der-Waals gap
tunneling spectroscopy
multi-walled carbon nanotubes
indium
Online Access:https://www.mdpi.com/1420-3049/26/8/2128
id doaj-880bb38c780d4435bd8da5c242ca4b7e
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spelling doaj-880bb38c780d4435bd8da5c242ca4b7e2021-04-07T23:05:24ZengMDPI AGMolecules1420-30492021-04-01262128212810.3390/molecules26082128Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals GapDong-Hwan Choi0Seung Mi Lee1Du-Won Jeong2Jeong-O Lee3Dong Han Ha4Myung-Ho Bae5Ju-Jin Kim6Department of Physics, Jeonbuk National University, Jeonju 54896, KoreaKorea Research Institute of Standards and Science, Daejeon 34113, KoreaDepartment of Physics, Jeonbuk National University, Jeonju 54896, KoreaKorea Research Institute of Chemical Technology, Daejeon 34114, KoreaKorea Research Institute of Standards and Science, Daejeon 34113, KoreaKorea Research Institute of Standards and Science, Daejeon 34113, KoreaDepartment of Physics, Jeonbuk National University, Jeonju 54896, KoreaVarious intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional systems. Recently, van der Waals (vdW) gap tunneling spectroscopy for single-walled CNTs with indium–metal contacts was performed adopting an FET device, providing the direct assignment of the subband location in terms of the current–voltage characteristic. Here, we extend the vdW gap tunneling spectroscopy to multi-walled CNTs, which provides transport spectroscopy in a tunneling regime of ~1 eV, directly reflecting the electronic density of states. This new quantum transport regime may allow the development of novel quantum devices by selective electron (or hole) injection to specific subbands.https://www.mdpi.com/1420-3049/26/8/2128van-der-Waals gaptunneling spectroscopymulti-walled carbon nanotubesindium
collection DOAJ
language English
format Article
sources DOAJ
author Dong-Hwan Choi
Seung Mi Lee
Du-Won Jeong
Jeong-O Lee
Dong Han Ha
Myung-Ho Bae
Ju-Jin Kim
spellingShingle Dong-Hwan Choi
Seung Mi Lee
Du-Won Jeong
Jeong-O Lee
Dong Han Ha
Myung-Ho Bae
Ju-Jin Kim
Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
Molecules
van-der-Waals gap
tunneling spectroscopy
multi-walled carbon nanotubes
indium
author_facet Dong-Hwan Choi
Seung Mi Lee
Du-Won Jeong
Jeong-O Lee
Dong Han Ha
Myung-Ho Bae
Ju-Jin Kim
author_sort Dong-Hwan Choi
title Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
title_short Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
title_full Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
title_fullStr Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
title_full_unstemmed Tunneling Spectroscopy for Electronic Bands in Multi-Walled Carbon Nanotubes with Van Der Waals Gap
title_sort tunneling spectroscopy for electronic bands in multi-walled carbon nanotubes with van der waals gap
publisher MDPI AG
series Molecules
issn 1420-3049
publishDate 2021-04-01
description Various intriguing quantum transport measurements for carbon nanotubes (CNTs) based on their unique electronic band structures have been performed adopting a field-effect transistor (FET), where the contact resistance represents the interaction between the one-dimensional and three-dimensional systems. Recently, van der Waals (vdW) gap tunneling spectroscopy for single-walled CNTs with indium–metal contacts was performed adopting an FET device, providing the direct assignment of the subband location in terms of the current–voltage characteristic. Here, we extend the vdW gap tunneling spectroscopy to multi-walled CNTs, which provides transport spectroscopy in a tunneling regime of ~1 eV, directly reflecting the electronic density of states. This new quantum transport regime may allow the development of novel quantum devices by selective electron (or hole) injection to specific subbands.
topic van-der-Waals gap
tunneling spectroscopy
multi-walled carbon nanotubes
indium
url https://www.mdpi.com/1420-3049/26/8/2128
work_keys_str_mv AT donghwanchoi tunnelingspectroscopyforelectronicbandsinmultiwalledcarbonnanotubeswithvanderwaalsgap
AT seungmilee tunnelingspectroscopyforelectronicbandsinmultiwalledcarbonnanotubeswithvanderwaalsgap
AT duwonjeong tunnelingspectroscopyforelectronicbandsinmultiwalledcarbonnanotubeswithvanderwaalsgap
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