Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

<p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structu...

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Main Authors: Fedorov A, Somaschini C, Bietti S, Koguchi N, Sanguinetti S
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Online Access:http://dx.doi.org/10.1007/s11671-010-9752-5
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spelling doaj-88af9f167fc64938a200b3838dfe1d742020-11-25T00:57:40ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151218971900Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet EpitaxyFedorov ASomaschini CBietti SKoguchi NSanguinetti S<p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.</p> http://dx.doi.org/10.1007/s11671-010-9752-5Molecular beam epitaxyDroplet epitaxyGaAs nanostructuresPhotoluminescence
collection DOAJ
language English
format Article
sources DOAJ
author Fedorov A
Somaschini C
Bietti S
Koguchi N
Sanguinetti S
spellingShingle Fedorov A
Somaschini C
Bietti S
Koguchi N
Sanguinetti S
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
Nanoscale Research Letters
Molecular beam epitaxy
Droplet epitaxy
GaAs nanostructures
Photoluminescence
author_facet Fedorov A
Somaschini C
Bietti S
Koguchi N
Sanguinetti S
author_sort Fedorov A
title Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_short Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_full Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_fullStr Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_full_unstemmed Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
title_sort growth interruption effect on the fabrication of gaas concentric multiple rings by droplet epitaxy
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2010-01-01
description <p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.</p>
topic Molecular beam epitaxy
Droplet epitaxy
GaAs nanostructures
Photoluminescence
url http://dx.doi.org/10.1007/s11671-010-9752-5
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AT biettis growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy
AT koguchin growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy
AT sanguinettis growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy
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