Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
<p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structu...
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Online Access: | http://dx.doi.org/10.1007/s11671-010-9752-5 |
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doaj-88af9f167fc64938a200b3838dfe1d742020-11-25T00:57:40ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2010-01-0151218971900Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet EpitaxyFedorov ASomaschini CBietti SKoguchi NSanguinetti S<p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.</p> http://dx.doi.org/10.1007/s11671-010-9752-5Molecular beam epitaxyDroplet epitaxyGaAs nanostructuresPhotoluminescence |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Fedorov A Somaschini C Bietti S Koguchi N Sanguinetti S |
spellingShingle |
Fedorov A Somaschini C Bietti S Koguchi N Sanguinetti S Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy Nanoscale Research Letters Molecular beam epitaxy Droplet epitaxy GaAs nanostructures Photoluminescence |
author_facet |
Fedorov A Somaschini C Bietti S Koguchi N Sanguinetti S |
author_sort |
Fedorov A |
title |
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy |
title_short |
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy |
title_full |
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy |
title_fullStr |
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy |
title_full_unstemmed |
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy |
title_sort |
growth interruption effect on the fabrication of gaas concentric multiple rings by droplet epitaxy |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2010-01-01 |
description |
<p>Abstract</p> <p>We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy, we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times, caused by the migration of Ga in a low As background.</p> |
topic |
Molecular beam epitaxy Droplet epitaxy GaAs nanostructures Photoluminescence |
url |
http://dx.doi.org/10.1007/s11671-010-9752-5 |
work_keys_str_mv |
AT fedorova growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy AT somaschinic growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy AT biettis growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy AT koguchin growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy AT sanguinettis growthinterruptioneffectonthefabricationofgaasconcentricmultipleringsbydropletepitaxy |
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