The Influence of B, N and Si Doping on the CH<sub>3</sub> Adsorption on the Diamond Surface Based on DFT Calculations

The Influence of B, N and Si Doping on the CH<sub>3</sub> Adsorption on the Diamond Surface Based on DFT Calculations

To better understand the influence mechanism of boron, nitrogen and silicon dopants on the growth of chemical vapor deposition (CVD) diamond film, density functional calculations have been performed to reveal the different impact of the impurities on the CH<sub>3</sub> adsorption on diam...

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Bibliographic Details
Main Authors: Liang Wang, Jiangshan Liu, Tang Tang
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Crystals
Subjects:
boron
silicon
nitrogen
growth mechanism
diamond film
first principles
Online Access:https://www.mdpi.com/2073-4352/9/8/427

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