THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES

At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.

Bibliographic Details
Main Author: Т. E. Sarkarov
Format: Article
Language:Russian
Published: Daghestan State Technical University 2016-07-01
Series:Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
Subjects:
substrate
silicon
epitaxy
oxidation
defects
dislocation
semiconductors
technology
method
material
crystal structure
volume
diffusion
surface concentration
Online Access:https://vestnik.dgtu.ru/jour/article/view/25
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spelling doaj-890ab2f8cff4451e852ccdbb931d6e392021-07-28T20:54:32ZrusDaghestan State Technical UniversityVestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki 2073-61852542-095X2016-07-01281323810.21822/2073-6185-2013-0-1(28)-32-3824THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSESТ. E. SarkarovAt present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.https://vestnik.dgtu.ru/jour/article/view/25substratesiliconepitaxyoxidationdefectsdislocationsemiconductorstechnologymethodmaterialcrystal structurevolumediffusionsurface concentration
collection DOAJ
language Russian
format Article
sources DOAJ
author Т. E. Sarkarov
spellingShingle Т. E. Sarkarov
THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
substrate
silicon
epitaxy
oxidation
defects
dislocation
semiconductors
technology
method
material
crystal structure
volume
diffusion
surface concentration
author_facet Т. E. Sarkarov
author_sort Т. E. Sarkarov
title THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
title_short THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
title_full THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
title_fullStr THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
title_full_unstemmed THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
title_sort influence of structural defects on the kinetics of diffusion processes
publisher Daghestan State Technical University
series Vestnik Dagestanskogo Gosudarstvennogo Tehničeskogo Universiteta: Tehničeskie Nauki
issn 2073-6185
2542-095X
publishDate 2016-07-01
description At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
topic substrate
silicon
epitaxy
oxidation
defects
dislocation
semiconductors
technology
method
material
crystal structure
volume
diffusion
surface concentration
url https://vestnik.dgtu.ru/jour/article/view/25
work_keys_str_mv AT tesarkarov theinfluenceofstructuraldefectsonthekineticsofdiffusionprocesses
AT tesarkarov influenceofstructuraldefectsonthekineticsofdiffusionprocesses
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