| Summary: | Spin-gapless semiconductors (SGSs) with Dirac-like band crossings may exhibit massless fermions and dissipationless transport properties. In this study, by applying the density functional theory, novel multiple linear-type spin-gapless semiconducting band structures were found in a synthesized <inline-formula> <math display="inline"> <semantics> <mrow> <mi>R</mi> <mover> <mn>3</mn> <mo>−</mo> </mover> <mi>c</mi> </mrow> </semantics> </math> </inline-formula>-type bulk PdF<sub>3</sub> compound, which has potential applications in ultra-fast and ultra-low power spintronic devices. The effects of spin-orbit coupling and on-site Coulomb interaction were determined for the bulk material in this study. To explore the potential applications in spintronic devices, we also performed first-principles combined with the non-equilibrium Green’s function for the PdF<sub>3</sub>/Ga<sub>2</sub>O<sub>3</sub>/PdF<sub>3</sub> magnetic tunnel junction (MTJ). The results suggested that this MTJ exhibits perfect spin filtering and high tunnel magnetoresistance (~5.04 × 10<sup>7</sup>).
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