Problem of attaining constant impurity concentration over ingot height
The possibility of growing crystals with homogeneous impurity distribution over crystal height has been demonstrated in a study of segregation during silicon and germanium growth from thin melt layers using the submerged heater method. Numeric simulation of 200 mm diam. antimony-do...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Pensoft Publishers
2018-06-01
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| Series: | Modern Electronic Materials |
| Online Access: | https://moem.pensoft.net/article/38536/download/pdf/ |