RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication

Thin film Cu(In,Ga)Se<sub>2</sub> (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of e...

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Main Authors: Slawomir Gulkowski, Ewelina Krawczak
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Coatings
Subjects:
SEM
XRD
Online Access:https://www.mdpi.com/2079-6412/10/8/791
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spelling doaj-8ba88e93b18b4e0394a374498e4457e82020-11-25T03:34:43ZengMDPI AGCoatings2079-64122020-08-011079179110.3390/coatings10080791RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell FabricationSlawomir Gulkowski0Ewelina Krawczak1Department of Renewable Energy Engineering, Faculty of Environmental Engineering, Lublin University of Technology, Nadbystrzycka 40B, 20-618 Lublin, PolandDepartment of Renewable Energy Engineering, Faculty of Environmental Engineering, Lublin University of Technology, Nadbystrzycka 40B, 20-618 Lublin, PolandThin film Cu(In,Ga)Se<sub>2</sub> (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se<sub>2</sub> film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed.https://www.mdpi.com/2079-6412/10/8/791photovoltaicsCIGSthin filmmagnetron sputteringSEMXRD
collection DOAJ
language English
format Article
sources DOAJ
author Slawomir Gulkowski
Ewelina Krawczak
spellingShingle Slawomir Gulkowski
Ewelina Krawczak
RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
Coatings
photovoltaics
CIGS
thin film
magnetron sputtering
SEM
XRD
author_facet Slawomir Gulkowski
Ewelina Krawczak
author_sort Slawomir Gulkowski
title RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
title_short RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
title_full RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
title_fullStr RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
title_full_unstemmed RF/DC Magnetron Sputtering Deposition of Thin Layers for Solar Cell Fabrication
title_sort rf/dc magnetron sputtering deposition of thin layers for solar cell fabrication
publisher MDPI AG
series Coatings
issn 2079-6412
publishDate 2020-08-01
description Thin film Cu(In,Ga)Se<sub>2</sub> (CIGS)-based solar cells with relatively high efficiency and low material usage might become a promising alternative for crystalline silicon technology. The most challenging task nowadays is to decrease the PV module fabrication costs by application of easily scalable industrial process. One of the possible solutions is the usage of magnetron sputtering system for deposition of all structures applied in CIGS-based photovoltaic device. The main object of these studies was fabrication and characterization of thin films deposited by sputtering technique. Structural and electrical properties of the sputtered films were analyzed using scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), X-ray Powder Diffraction (XRD), and four-point probe resistivity measurements. The presented findings revealed technological parameters for which sheet resistance of molybdenum (Mo) back contact decreased up to 0.3 Ω/□ and to even 0.08 Ω/□ in case of aluminum layer. EDS analysis provided evidence for the appropriate stoichiometry of CIGS absorber (with CGI and GGI equal to 0.96 and 0.2, respectively). XRD characterization confirmed high-quality chalcopyrite polycrystalline structure of Cu(In,Ga)Se<sub>2</sub> film fabricated at relatively low substrate temperature of 400 °C. Characteristic XRD peaks of hexagonal-oriented structures of sputtered CdS and i-ZnO layers were noticed.
topic photovoltaics
CIGS
thin film
magnetron sputtering
SEM
XRD
url https://www.mdpi.com/2079-6412/10/8/791
work_keys_str_mv AT slawomirgulkowski rfdcmagnetronsputteringdepositionofthinlayersforsolarcellfabrication
AT ewelinakrawczak rfdcmagnetronsputteringdepositionofthinlayersforsolarcellfabrication
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