Microstructure of non-polar GaN on LiGaO₂grown by plasma-assisted MBE

• Main Authors: Huang Teng-Hsing, Chang Liuwen, Chou Mitch, Schuber Ralf, Schaadt Daniel, Shih Cheng-Hung, Chen Yen-Liang, Lo Ikai
• Format: Article
• Language: English
• Published: SpringerOpen 2011-01-01
• Series: Nanoscale Research Letters
• Online Access: http://www.nanoscalereslett.com/content/6/1/425

<p>Abstract</p> <p>We have investigated the structure of non-polar GaN, both on the <it>M </it>- and <it>A</it>-plane, grown on LiGaO₂by plasma-assisted molecular beam epitaxy. The epitaxial relationship and the microstructure of the GaN films are investigated by transmission electron microscopy (TEM). The already reported epi-taxial relationship <inline-formula> <graphic file="1556-276X-6-425-i1.gif"/> </inline-formula> and <inline-formula> <graphic file="1556-276X-6-425-i2.gif"/> </inline-formula> for <it>M </it>-plane GaN is confirmed. The main defects are threading dislocations and stacking faults in both samples. For the <it>M </it>-plane sample, the density of threading dislocations is around 1 &#215; 10¹¹cm^-2and the stacking fault density amounts to approximately 2 &#215; 10⁵cm^-1. In the <it>A</it>-plane sample, a threading dislocation density in the same order was found, while the stacking fault density is much lower than in the <it>M </it>-plane sample.</p>