Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investig...

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Main Authors:	E. C. Romani, D. G. Larrude, M. E. H. Maia da Costa, G. Mariotto, F. L. Freire
Format:	Article
Language:	English
Published:	Hindawi Limited 2017-01-01
Series:	Journal of Nanomaterials
Online Access:	http://dx.doi.org/10.1155/2017/9298637

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spelling	doaj-8d2ab3279a284b168a8db5d3228eb0702020-11-24T23:07:07ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292017-01-01201710.1155/2017/92986379298637Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single PrecursorE. C. Romani0D. G. Larrude1M. E. H. Maia da Costa2G. Mariotto3F. L. Freire4Department of Physics, Pontifical Catholic University of Rio de Janeiro, 22451-900 Rio de Janeiro, RJ, BrazilMackGraphe, Mackenzie Presbyterian University, 01302-907 São Paulo, SP, BrazilDepartment of Physics, Pontifical Catholic University of Rio de Janeiro, 22451-900 Rio de Janeiro, RJ, BrazilDepartment of Computer Science, University of Verona, 37134 Verona, ItalyDepartment of Physics, Pontifical Catholic University of Rio de Janeiro, 22451-900 Rio de Janeiro, RJ, BrazilWe synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.http://dx.doi.org/10.1155/2017/9298637
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	E. C. Romani D. G. Larrude M. E. H. Maia da Costa G. Mariotto F. L. Freire
spellingShingle	E. C. Romani D. G. Larrude M. E. H. Maia da Costa G. Mariotto F. L. Freire Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor Journal of Nanomaterials
author_facet	E. C. Romani D. G. Larrude M. E. H. Maia da Costa G. Mariotto F. L. Freire
author_sort	E. C. Romani
title	Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor
title_short	Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor
title_full	Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor
title_fullStr	Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor
title_full_unstemmed	Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor
title_sort	incorporation of boron atoms on graphene grown by chemical vapor deposition using triisopropyl borate as a single precursor
publisher	Hindawi Limited
series	Journal of Nanomaterials
issn	1687-4110 1687-4129
publishDate	2017-01-01
description	We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.
url	http://dx.doi.org/10.1155/2017/9298637
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Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

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