Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confi...

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Main Authors: Y. C. Chang, A. J. Robson, S. Harrison, Q. D. Zhuang, M. Hayne
Format: Article
Language:English
Published: AIP Publishing LLC 2015-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4922950
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spelling doaj-8fe4ff05ff1040a7bd7e906b93a361cd2020-11-24T21:27:46ZengAIP Publishing LLCAIP Advances2158-32262015-06-0156067141067141-610.1063/1.4922950040506ADVPhonon bottleneck in GaAs/AlxGa1−xAs quantum dotsY. C. Chang0A. J. Robson1S. Harrison2Q. D. Zhuang3M. Hayne4Department of Physics, Lancaster University, Lancaster, LA1 4YB, UKDepartment of Physics, Lancaster University, Lancaster, LA1 4YB, UKDepartment of Physics, Lancaster University, Lancaster, LA1 4YB, UKDepartment of Physics, Lancaster University, Lancaster, LA1 4YB, UKDepartment of Physics, Lancaster University, Lancaster, LA1 4YB, UKWe report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.http://dx.doi.org/10.1063/1.4922950
collection DOAJ
language English
format Article
sources DOAJ
author Y. C. Chang
A. J. Robson
S. Harrison
Q. D. Zhuang
M. Hayne
spellingShingle Y. C. Chang
A. J. Robson
S. Harrison
Q. D. Zhuang
M. Hayne
Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
AIP Advances
author_facet Y. C. Chang
A. J. Robson
S. Harrison
Q. D. Zhuang
M. Hayne
author_sort Y. C. Chang
title Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
title_short Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
title_full Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
title_fullStr Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
title_full_unstemmed Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
title_sort phonon bottleneck in gaas/alxga1−xas quantum dots
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2015-06-01
description We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies of the confined states in the system, as confirmed by effective mass calculations. The presence of acceptor-bound holes in the quantum dots gives rise to a striking observation of the phonon-bottleneck effect.
url http://dx.doi.org/10.1063/1.4922950
work_keys_str_mv AT ycchang phononbottleneckingaasalxga1xasquantumdots
AT ajrobson phononbottleneckingaasalxga1xasquantumdots
AT sharrison phononbottleneckingaasalxga1xasquantumdots
AT qdzhuang phononbottleneckingaasalxga1xasquantumdots
AT mhayne phononbottleneckingaasalxga1xasquantumdots
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