Experimental, Modelling and Theoretical Study of CNT Growth and Connection on a Flip - Chip Device to Improve Thermal Management Performances

• Main Authors: M. Sarno, R. Piscitelli, F. Marra, C. Cirillo, P. Ciambelli
• Format: Article
• Language: English
• Published: AIDIC Servizi S.r.l. 2017-03-01
• Series: Chemical Engineering Transactions
• Online Access: https://www.cetjournal.it/index.php/cet/article/view/2317

Here we report an experimental, modelling and theoretical study of CNT growth and connection on a chip device with a flip chip configuration used to improve thermal management performances, in order to elaborate board design analysis. CNTs growth was obtained for the first time on AlN substrate typically used in high power electronic. The thermal conductivity of isolated CNT was 1698,5 W/mK. Moreover, the aim of this paper was to study the role of the design parameters to mitigate the effects of a non-correct thermal management obtained with the help of high thermal conductive CNT connections bumps. With the support of a simulator we evaluated thermal performances to help in a preliminary phase the board design. We worked on a configuration that would allow the direct integration into flip-chip devices in order to reduce the thermal contact resistance at interfaces from the die through the heat spreader and the junction temperature and thermal crosstalk.