Low temperature synthesized indium tin oxide nanowires

Directional indium tin oxide (ITO) nanowires were successfully grown on SiO2/Si at temperatures ranging fromapproximately 640oC to 800oC and pressure of about 300 mtorr using SnO and In powders. The results show that growthtemperature strongly affects the morphology and composition of ITO nanostruct...

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Bibliographic Details
Main Authors: Tula Jutarosaga, Steven M. Smith, Yong Liang
Format: Article
Language:English
Published: Prince of Songkla University 2009-01-01
Series:Songklanakarin Journal of Science and Technology (SJST)
Subjects:
Online Access:http://www.rdoapp.psu.ac.th/sjst/ejournal/journal/31-1/0125-3395-31-1-111-115.pdf