Nodal ring spin gapless semiconductor: New member of spintronic materials
Introduction: Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics. Objectives: Since their advent, all SGSs a...
Main Authors: | , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2021-02-01
|
Series: | Journal of Advanced Research |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2090123220301259 |
id |
doaj-925c7972f889448288b18d60f4f3159c |
---|---|
record_format |
Article |
spelling |
doaj-925c7972f889448288b18d60f4f3159c2021-02-15T04:13:05ZengElsevierJournal of Advanced Research2090-12322021-02-01284349Nodal ring spin gapless semiconductor: New member of spintronic materialsTie Yang0Zhenxiang Cheng1Xiaotian Wang2Xiao-Lin Wang3School of Physical Science and Technology, Southwest University, Chongqing 400715, ChinaInstitute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500, Australia; Corresponding authors.School of Physical Science and Technology, Southwest University, Chongqing 400715, China; Corresponding authors.Institute for Superconducting and Electronic Materials, University of Wollongong, Wollongong 2500, AustraliaIntroduction: Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics. Objectives: Since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs. Methods: The synthesized material Mg2VO4 has been detailed with band structure analysis based on first principle calculations. Results: Obtained results revealed that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg2VO4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg2VO4 also shows strong robustness against both the spin orbit coupling effect and strain conditions. Conclusion: For the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications.http://www.sciencedirect.com/science/article/pii/S2090123220301259 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tie Yang Zhenxiang Cheng Xiaotian Wang Xiao-Lin Wang |
spellingShingle |
Tie Yang Zhenxiang Cheng Xiaotian Wang Xiao-Lin Wang Nodal ring spin gapless semiconductor: New member of spintronic materials Journal of Advanced Research |
author_facet |
Tie Yang Zhenxiang Cheng Xiaotian Wang Xiao-Lin Wang |
author_sort |
Tie Yang |
title |
Nodal ring spin gapless semiconductor: New member of spintronic materials |
title_short |
Nodal ring spin gapless semiconductor: New member of spintronic materials |
title_full |
Nodal ring spin gapless semiconductor: New member of spintronic materials |
title_fullStr |
Nodal ring spin gapless semiconductor: New member of spintronic materials |
title_full_unstemmed |
Nodal ring spin gapless semiconductor: New member of spintronic materials |
title_sort |
nodal ring spin gapless semiconductor: new member of spintronic materials |
publisher |
Elsevier |
series |
Journal of Advanced Research |
issn |
2090-1232 |
publishDate |
2021-02-01 |
description |
Introduction: Spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential in the field of spintronics and magnetoelectronics. Objectives: Since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs. Methods: The synthesized material Mg2VO4 has been detailed with band structure analysis based on first principle calculations. Results: Obtained results revealed that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg2VO4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg2VO4 also shows strong robustness against both the spin orbit coupling effect and strain conditions. Conclusion: For the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications. |
url |
http://www.sciencedirect.com/science/article/pii/S2090123220301259 |
work_keys_str_mv |
AT tieyang nodalringspingaplesssemiconductornewmemberofspintronicmaterials AT zhenxiangcheng nodalringspingaplesssemiconductornewmemberofspintronicmaterials AT xiaotianwang nodalringspingaplesssemiconductornewmemberofspintronicmaterials AT xiaolinwang nodalringspingaplesssemiconductornewmemberofspintronicmaterials |
_version_ |
1724269310439849984 |