Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation
Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 × 1011 n/cm2. Electrical characteristics such as c...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2017-02-01
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| Series: | Nuclear Engineering and Technology |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S1738573316301930 |