Laser-Inscribed Stress-Induced Birefringence of Sapphire
Birefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>×</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup>...
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doaj-9296f641e29341b4a35cfd75c9ac37a42020-11-25T02:11:10ZengMDPI AGNanomaterials2079-49912019-10-01910141410.3390/nano9101414nano9101414Laser-Inscribed Stress-Induced Birefringence of SapphireHua Fan0Meguya Ryu1Reo Honda2Junko Morikawa3Zhen-Ze Li4Lei Wang5Jovan Maksimovic6Saulius Juodkazis7Qi-Dai Chen8Hong-Bo Sun9State Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaCentre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, VIC 3122, AustraliaTokyo Tech World Research Hub Initiative (WRHI), School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550, JapanState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, ChinaBirefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>×</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> is demonstrated inside cross-sectional regions of 100 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m, inscribed by axially stretched Bessel-beam-like fs-laser pulses along the c-axis inside sapphire. A high birefringence and retardance of <inline-formula> <math display="inline"> <semantics> <mrow> <mi>λ</mi> <mo>/</mo> <mn>4</mn> </mrow> </semantics> </math> </inline-formula> at mid-visible spectral range (green) can be achieved using stretched beams with axial extension of 30−40 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m. Chosen conditions of laser-writing ensure that there are no formations of self-organized nano-gratings. This method can be adopted for creation of polarization optical elements and fabrication of spatially varying birefringent patterns for optical vortex generation.https://www.mdpi.com/2079-4991/9/10/1414femtosecond laserbirefringencestresssapphire |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Hua Fan Meguya Ryu Reo Honda Junko Morikawa Zhen-Ze Li Lei Wang Jovan Maksimovic Saulius Juodkazis Qi-Dai Chen Hong-Bo Sun |
spellingShingle |
Hua Fan Meguya Ryu Reo Honda Junko Morikawa Zhen-Ze Li Lei Wang Jovan Maksimovic Saulius Juodkazis Qi-Dai Chen Hong-Bo Sun Laser-Inscribed Stress-Induced Birefringence of Sapphire Nanomaterials femtosecond laser birefringence stress sapphire |
author_facet |
Hua Fan Meguya Ryu Reo Honda Junko Morikawa Zhen-Ze Li Lei Wang Jovan Maksimovic Saulius Juodkazis Qi-Dai Chen Hong-Bo Sun |
author_sort |
Hua Fan |
title |
Laser-Inscribed Stress-Induced Birefringence of Sapphire |
title_short |
Laser-Inscribed Stress-Induced Birefringence of Sapphire |
title_full |
Laser-Inscribed Stress-Induced Birefringence of Sapphire |
title_fullStr |
Laser-Inscribed Stress-Induced Birefringence of Sapphire |
title_full_unstemmed |
Laser-Inscribed Stress-Induced Birefringence of Sapphire |
title_sort |
laser-inscribed stress-induced birefringence of sapphire |
publisher |
MDPI AG |
series |
Nanomaterials |
issn |
2079-4991 |
publishDate |
2019-10-01 |
description |
Birefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>×</mo> <msup> <mn>10</mn> <mrow> <mo>−</mo> <mn>3</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> is demonstrated inside cross-sectional regions of 100 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m, inscribed by axially stretched Bessel-beam-like fs-laser pulses along the c-axis inside sapphire. A high birefringence and retardance of <inline-formula> <math display="inline"> <semantics> <mrow> <mi>λ</mi> <mo>/</mo> <mn>4</mn> </mrow> </semantics> </math> </inline-formula> at mid-visible spectral range (green) can be achieved using stretched beams with axial extension of 30−40 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">μ</mi> </semantics> </math> </inline-formula>m. Chosen conditions of laser-writing ensure that there are no formations of self-organized nano-gratings. This method can be adopted for creation of polarization optical elements and fabrication of spatially varying birefringent patterns for optical vortex generation. |
topic |
femtosecond laser birefringence stress sapphire |
url |
https://www.mdpi.com/2079-4991/9/10/1414 |
work_keys_str_mv |
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