Laser-Inscribed Stress-Induced Birefringence of Sapphire

Birefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>&#215;</mo> <msup> <mn>10</mn> <mrow> <mo>&#8722;</mo> <mn>3</mn> </mrow> </msup>...

Full description

Bibliographic Details
Main Authors: Hua Fan, Meguya Ryu, Reo Honda, Junko Morikawa, Zhen-Ze Li, Lei Wang, Jovan Maksimovic, Saulius Juodkazis, Qi-Dai Chen, Hong-Bo Sun
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/9/10/1414
id doaj-9296f641e29341b4a35cfd75c9ac37a4
record_format Article
spelling doaj-9296f641e29341b4a35cfd75c9ac37a42020-11-25T02:11:10ZengMDPI AGNanomaterials2079-49912019-10-01910141410.3390/nano9101414nano9101414Laser-Inscribed Stress-Induced Birefringence of SapphireHua Fan0Meguya Ryu1Reo Honda2Junko Morikawa3Zhen-Ze Li4Lei Wang5Jovan Maksimovic6Saulius Juodkazis7Qi-Dai Chen8Hong-Bo Sun9State Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanSchool of Materials and Chemical Technology, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550, JapanState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaCentre for Micro-Photonics, Faculty of Science, Engineering and Technology, Swinburne University of Technology, Hawthorn, VIC 3122, AustraliaTokyo Tech World Research Hub Initiative (WRHI), School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1, Ookayama, Meguro-ku, Tokyo 152-8550, JapanState Key Laboratory of Integrated Optoeletronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, ChinaState Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, ChinaBirefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>&#215;</mo> <msup> <mn>10</mn> <mrow> <mo>&#8722;</mo> <mn>3</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> is demonstrated inside cross-sectional regions of 100 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">&#956;</mi> </semantics> </math> </inline-formula>m, inscribed by axially stretched Bessel-beam-like fs-laser pulses along the c-axis inside sapphire. A high birefringence and retardance of <inline-formula> <math display="inline"> <semantics> <mrow> <mi>&#955;</mi> <mo>/</mo> <mn>4</mn> </mrow> </semantics> </math> </inline-formula> at mid-visible spectral range (green) can be achieved using stretched beams with axial extension of 30&#8722;40 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">&#956;</mi> </semantics> </math> </inline-formula>m. Chosen conditions of laser-writing ensure that there are no formations of self-organized nano-gratings. This method can be adopted for creation of polarization optical elements and fabrication of spatially varying birefringent patterns for optical vortex generation.https://www.mdpi.com/2079-4991/9/10/1414femtosecond laserbirefringencestresssapphire
collection DOAJ
language English
format Article
sources DOAJ
author Hua Fan
Meguya Ryu
Reo Honda
Junko Morikawa
Zhen-Ze Li
Lei Wang
Jovan Maksimovic
Saulius Juodkazis
Qi-Dai Chen
Hong-Bo Sun
spellingShingle Hua Fan
Meguya Ryu
Reo Honda
Junko Morikawa
Zhen-Ze Li
Lei Wang
Jovan Maksimovic
Saulius Juodkazis
Qi-Dai Chen
Hong-Bo Sun
Laser-Inscribed Stress-Induced Birefringence of Sapphire
Nanomaterials
femtosecond laser
birefringence
stress
sapphire
author_facet Hua Fan
Meguya Ryu
Reo Honda
Junko Morikawa
Zhen-Ze Li
Lei Wang
Jovan Maksimovic
Saulius Juodkazis
Qi-Dai Chen
Hong-Bo Sun
author_sort Hua Fan
title Laser-Inscribed Stress-Induced Birefringence of Sapphire
title_short Laser-Inscribed Stress-Induced Birefringence of Sapphire
title_full Laser-Inscribed Stress-Induced Birefringence of Sapphire
title_fullStr Laser-Inscribed Stress-Induced Birefringence of Sapphire
title_full_unstemmed Laser-Inscribed Stress-Induced Birefringence of Sapphire
title_sort laser-inscribed stress-induced birefringence of sapphire
publisher MDPI AG
series Nanomaterials
issn 2079-4991
publishDate 2019-10-01
description Birefringence of <inline-formula> <math display="inline"> <semantics> <mrow> <mn>3</mn> <mo>&#215;</mo> <msup> <mn>10</mn> <mrow> <mo>&#8722;</mo> <mn>3</mn> </mrow> </msup> </mrow> </semantics> </math> </inline-formula> is demonstrated inside cross-sectional regions of 100 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">&#956;</mi> </semantics> </math> </inline-formula>m, inscribed by axially stretched Bessel-beam-like fs-laser pulses along the c-axis inside sapphire. A high birefringence and retardance of <inline-formula> <math display="inline"> <semantics> <mrow> <mi>&#955;</mi> <mo>/</mo> <mn>4</mn> </mrow> </semantics> </math> </inline-formula> at mid-visible spectral range (green) can be achieved using stretched beams with axial extension of 30&#8722;40 <inline-formula> <math display="inline"> <semantics> <mi mathvariant="sans-serif">&#956;</mi> </semantics> </math> </inline-formula>m. Chosen conditions of laser-writing ensure that there are no formations of self-organized nano-gratings. This method can be adopted for creation of polarization optical elements and fabrication of spatially varying birefringent patterns for optical vortex generation.
topic femtosecond laser
birefringence
stress
sapphire
url https://www.mdpi.com/2079-4991/9/10/1414
work_keys_str_mv AT huafan laserinscribedstressinducedbirefringenceofsapphire
AT meguyaryu laserinscribedstressinducedbirefringenceofsapphire
AT reohonda laserinscribedstressinducedbirefringenceofsapphire
AT junkomorikawa laserinscribedstressinducedbirefringenceofsapphire
AT zhenzeli laserinscribedstressinducedbirefringenceofsapphire
AT leiwang laserinscribedstressinducedbirefringenceofsapphire
AT jovanmaksimovic laserinscribedstressinducedbirefringenceofsapphire
AT sauliusjuodkazis laserinscribedstressinducedbirefringenceofsapphire
AT qidaichen laserinscribedstressinducedbirefringenceofsapphire
AT hongbosun laserinscribedstressinducedbirefringenceofsapphire
_version_ 1724915834880524288