Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry
Wide bandgap III-V compounds are the key materials for the fabrication of short-wavelength optical devices and have important applications in optical displays, optical storage devices and optical communication systems. Herein, the variable-angle spectroscopic ellipsometry (SE) measurements are perfo...
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doaj-92a4d5165d0b4b92a1dc0c1c20342ab62020-11-25T02:14:59ZengMDPI AGCrystals2073-43522020-05-011043943910.3390/cryst10060439Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic EllipsometryWenwang Wei0Jiabin Wang1Yao Liu2Yi Peng3Mudassar Maraj4Biaolin Peng5Yukun Wang6Wenhong Sun7Research Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaResearch Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, 530004 Nanning, ChinaWide bandgap III-V compounds are the key materials for the fabrication of short-wavelength optical devices and have important applications in optical displays, optical storage devices and optical communication systems. Herein, the variable-angle spectroscopic ellipsometry (SE) measurements are performed to investigate the thickness and optical properties of beryllium-implanted gallium nitride thin films that have been deposited on (0001) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (LPMOCVD). The film layer details are described by using Parametric Semiconductor oscillators and Gaussian oscillators in the wavelength range of 200–1600 nm. The thickness, refractive indices and extinction coefficients of the Be-implanted films are determined at room temperature. Analysis of the absorption coefficient shows that the optical absorption edge of Be-implanted films changes from 3.328 eV to 3.083 eV in the temperature range of 300–850 K. With the variable temperature, <i>E<sub>g</sub></i> is demonstrated to follow the formula of Varshni. A dual-beam ultraviolet–visible spectrophotometer (UV–VIS) is used to study the crystal quality of samples, indicating that the quality of rapid thermal annealing (RTA) sample is better than that unannealed sample. By transport of ions in matter (TRIM) simulation and SE fitting the depths of Be implanted gallium nitride (GaN) films are estimated and in good agreement. The surface and cross-section morphologies are characterized by atomic force microscopy (AFM) and scanning electron microscope (SEM), respectively. The surface morphologies and thickness measurements of the samples show that RTA can improve crystal quality, while increasing the thickness of the surface roughness layer due to partial surface decomposition in the process of thermal annealing.https://www.mdpi.com/2073-4352/10/6/439spectroscopic ellipsometryoptical propertiestemperatureBe-implanted GaN |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Wenwang Wei Jiabin Wang Yao Liu Yi Peng Mudassar Maraj Biaolin Peng Yukun Wang Wenhong Sun |
spellingShingle |
Wenwang Wei Jiabin Wang Yao Liu Yi Peng Mudassar Maraj Biaolin Peng Yukun Wang Wenhong Sun Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry Crystals spectroscopic ellipsometry optical properties temperature Be-implanted GaN |
author_facet |
Wenwang Wei Jiabin Wang Yao Liu Yi Peng Mudassar Maraj Biaolin Peng Yukun Wang Wenhong Sun |
author_sort |
Wenwang Wei |
title |
Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry |
title_short |
Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry |
title_full |
Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry |
title_fullStr |
Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry |
title_full_unstemmed |
Effects of Thermal Annealing on Optical Properties of Be-Implanted Gan Thin Films by Spectroscopic Ellipsometry |
title_sort |
effects of thermal annealing on optical properties of be-implanted gan thin films by spectroscopic ellipsometry |
publisher |
MDPI AG |
series |
Crystals |
issn |
2073-4352 |
publishDate |
2020-05-01 |
description |
Wide bandgap III-V compounds are the key materials for the fabrication of short-wavelength optical devices and have important applications in optical displays, optical storage devices and optical communication systems. Herein, the variable-angle spectroscopic ellipsometry (SE) measurements are performed to investigate the thickness and optical properties of beryllium-implanted gallium nitride thin films that have been deposited on (0001) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (LPMOCVD). The film layer details are described by using Parametric Semiconductor oscillators and Gaussian oscillators in the wavelength range of 200–1600 nm. The thickness, refractive indices and extinction coefficients of the Be-implanted films are determined at room temperature. Analysis of the absorption coefficient shows that the optical absorption edge of Be-implanted films changes from 3.328 eV to 3.083 eV in the temperature range of 300–850 K. With the variable temperature, <i>E<sub>g</sub></i> is demonstrated to follow the formula of Varshni. A dual-beam ultraviolet–visible spectrophotometer (UV–VIS) is used to study the crystal quality of samples, indicating that the quality of rapid thermal annealing (RTA) sample is better than that unannealed sample. By transport of ions in matter (TRIM) simulation and SE fitting the depths of Be implanted gallium nitride (GaN) films are estimated and in good agreement. The surface and cross-section morphologies are characterized by atomic force microscopy (AFM) and scanning electron microscope (SEM), respectively. The surface morphologies and thickness measurements of the samples show that RTA can improve crystal quality, while increasing the thickness of the surface roughness layer due to partial surface decomposition in the process of thermal annealing. |
topic |
spectroscopic ellipsometry optical properties temperature Be-implanted GaN |
url |
https://www.mdpi.com/2073-4352/10/6/439 |
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