Nanodevices Tend to Be Round
Under several circumstances, a nanowire transistor with a square cross-section behaves as a circular. Taking the Gate-All-Around junctionless transistor as a primary example, we investigate the transition of the conductive region from square to circle-like. In this case, the metamorphosis is accentu...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-03-01
|
| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/3/330 |
| id |
doaj-9343d3ccb198404496e8edb1b2bea56e |
|---|---|
| record_format |
Article |
| spelling |
doaj-9343d3ccb198404496e8edb1b2bea56e2021-03-21T00:03:17ZengMDPI AGMicromachines2072-666X2021-03-011233033010.3390/mi12030330Nanodevices Tend to Be RoundGeorges Pananakakis0Gérard Ghibaudo1Sorin Cristoloveanu2IMEP-LAHC, Université Grenoble Alpes, Minatec/INPG, 3 Parvis L. Neel, CS 50257, CEDEX 1, 38016 Grenoble, FranceIMEP-LAHC, Université Grenoble Alpes, Minatec/INPG, 3 Parvis L. Neel, CS 50257, CEDEX 1, 38016 Grenoble, FranceIMEP-LAHC, Université Grenoble Alpes, Minatec/INPG, 3 Parvis L. Neel, CS 50257, CEDEX 1, 38016 Grenoble, FranceUnder several circumstances, a nanowire transistor with a square cross-section behaves as a circular. Taking the Gate-All-Around junctionless transistor as a primary example, we investigate the transition of the conductive region from square to circle-like. In this case, the metamorphosis is accentuated by smaller size, lower doping, and higher gate voltage. After defining the geometrical criterion for square-to-circle shift, simulation results are used to document the main consequences. This transition occurs naturally in nanowires thinner than 50 nm. The results are rather universal, and supportive evidence is gathered from inversion-mode Gate-All-Around (GAA) MOSFETs as well as from thermal diffusion process.https://www.mdpi.com/2072-666X/12/3/330nanoelectronicsnanowirejunctionlessMOSFETgate-all-aroundSOI |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Georges Pananakakis Gérard Ghibaudo Sorin Cristoloveanu |
| spellingShingle |
Georges Pananakakis Gérard Ghibaudo Sorin Cristoloveanu Nanodevices Tend to Be Round Micromachines nanoelectronics nanowire junctionless MOSFET gate-all-around SOI |
| author_facet |
Georges Pananakakis Gérard Ghibaudo Sorin Cristoloveanu |
| author_sort |
Georges Pananakakis |
| title |
Nanodevices Tend to Be Round |
| title_short |
Nanodevices Tend to Be Round |
| title_full |
Nanodevices Tend to Be Round |
| title_fullStr |
Nanodevices Tend to Be Round |
| title_full_unstemmed |
Nanodevices Tend to Be Round |
| title_sort |
nanodevices tend to be round |
| publisher |
MDPI AG |
| series |
Micromachines |
| issn |
2072-666X |
| publishDate |
2021-03-01 |
| description |
Under several circumstances, a nanowire transistor with a square cross-section behaves as a circular. Taking the Gate-All-Around junctionless transistor as a primary example, we investigate the transition of the conductive region from square to circle-like. In this case, the metamorphosis is accentuated by smaller size, lower doping, and higher gate voltage. After defining the geometrical criterion for square-to-circle shift, simulation results are used to document the main consequences. This transition occurs naturally in nanowires thinner than 50 nm. The results are rather universal, and supportive evidence is gathered from inversion-mode Gate-All-Around (GAA) MOSFETs as well as from thermal diffusion process. |
| topic |
nanoelectronics nanowire junctionless MOSFET gate-all-around SOI |
| url |
https://www.mdpi.com/2072-666X/12/3/330 |
| work_keys_str_mv |
AT georgespananakakis nanodevicestendtoberound AT gerardghibaudo nanodevicestendtoberound AT sorincristoloveanu nanodevicestendtoberound |
| _version_ |
1724211218161336320 |