Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch

Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch

In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 μJ, the peak voltages of the...

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Main Authors: Wei Shi, Lei Yang, Lei Hou, Zenan Liu, Nuo Xu, Zhiyang Xing
Format: Article
Language:English
Published: MDPI AG 2019-01-01
Series:Applied Sciences
Subjects:
gallium arsenide (GaAs)
photoconductive semiconductor switches (PCSSs)
fast rising edge
Online Access:https://www.mdpi.com/2076-3417/9/2/358
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spelling doaj-93b3ad576e0943aabf80dbdd33388d792020-11-24T21:33:28ZengMDPI AGApplied Sciences2076-34172019-01-019235810.3390/app9020358app9020358Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor SwitchWei Shi0Lei Yang1Lei Hou2Zenan Liu3Nuo Xu4Zhiyang Xing5Key Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaKey Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaKey Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaKey Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaKey Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaKey Laboratory of Ultrafast Photoelectric Technology and Terahertz Science in Shaanxi, Xi’an University of Technology, Xi’an 710048, ChinaIn this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 μJ, the peak voltages of the positive and negative pulses were 1.313 kV and 1.329 kV, respectively, and the rise times were 174 ps and 164 ps, respectively. Moreover, the GaAs PCSS presents good stability. The experimental results show that GaAs PCSSs can meet the requirement of a femtosecond streak camera.https://www.mdpi.com/2076-3417/9/2/358gallium arsenide (GaAs)photoconductive semiconductor switches (PCSSs)fast rising edge
collection DOAJ
language English
format Article
sources DOAJ
author Wei Shi
Lei Yang
Lei Hou
Zenan Liu
Nuo Xu
Zhiyang Xing
spellingShingle Wei Shi
Lei Yang
Lei Hou
Zenan Liu
Nuo Xu
Zhiyang Xing
Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
Applied Sciences
gallium arsenide (GaAs)
photoconductive semiconductor switches (PCSSs)
fast rising edge
author_facet Wei Shi
Lei Yang
Lei Hou
Zenan Liu
Nuo Xu
Zhiyang Xing
author_sort Wei Shi
title Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
title_short Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
title_full Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
title_fullStr Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
title_full_unstemmed Positive and Negative Symmetric Pulses with Fast Rising Edge Generated from a GaAs Photoconductive Semiconductor Switch
title_sort positive and negative symmetric pulses with fast rising edge generated from a gaas photoconductive semiconductor switch
publisher MDPI AG
series Applied Sciences
issn 2076-3417
publishDate 2019-01-01
description In this paper, the positive and negative symmetric pulses with a fast rising edge were generated by a GaAs photoconductive semiconductor switch (PCSS). When the GaAs PCSS was biased at 2.0 kV and triggered by a femtosecond laser pulse with a pulse energy of 97.5 μJ, the peak voltages of the positive and negative pulses were 1.313 kV and 1.329 kV, respectively, and the rise times were 174 ps and 164 ps, respectively. Moreover, the GaAs PCSS presents good stability. The experimental results show that GaAs PCSSs can meet the requirement of a femtosecond streak camera.
topic gallium arsenide (GaAs)
photoconductive semiconductor switches (PCSSs)
fast rising edge
url https://www.mdpi.com/2076-3417/9/2/358
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