Synthesis of Tin Nitride Sn_<it>x</it>N_<it>y</it>Nanowires by Chemical Vapour Deposition

• Main Authors: Othonos Andreas, Zervos Matthew
• Format: Article
• Language: English
• Published: SpringerOpen 2009-01-01
• Series: Nanoscale Research Letters
• Subjects: Tin nitride; Nanowires; Synthesis; Chemical vapor deposition
• Online Access: http://dx.doi.org/10.1007/s11671-009-9364-0
• ISSN: 1931-7573; 1556-276X

<p>Abstract</p> <p>Tin nitride (Sn_<it>x</it>N_<it>y</it>) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH₄Cl at 450 &#176;C under a steady flow of NH₃. The Sn_<it>x</it>N_<it>y</it>nanowires have an average diameter of 200 nm and lengths &#8805;5 &#956;m and were grown on Si(111) coated with a few nm&#8217;s of Au. Nitridation of Sn alone, under a flow of NH₃is not effective and leads to the deposition of Sn droplets on the Au/Si(111) surface which impedes one-dimensional growth over a wide temperature range i.e. 300&#8211;800 &#176;C. This was overcome by the addition of ammonium chloride (NH₄Cl) which undergoes sublimation at 338 &#176;C thereby releasing NH₃and HCl which act as dispersants thereby enhancing the vapour pressure of Sn and the one-dimensional growth of Sn_<it>x</it>N_<it>y</it>nanowires. In addition to the action of dispersion, Sn reacts with HCl giving SnCl₂which in turn reacts with NH₃leading to the formation of Sn_<it>x</it>N_<it>y</it>NWs. A first estimate of the band-gap of the Sn_<it>x</it>N_<it>y</it>nanowires grown on Si(111) was obtained from optical reflection measurements and found to be &#8776;2.6 eV. Finally, intricate assemblies of nanowires were also obtained at lower growth temperatures.</p>