The electronic structure of ε-Ga2O3

The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absen...

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Main Authors:	M. Mulazzi, F. Reichmann, A. Becker, W. M. Klesse, P. Alippi, V. Fiorentini, A. Parisini, M. Bosi, R. Fornari
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2019-02-01
Series:	APL Materials
Online Access:	http://dx.doi.org/10.1063/1.5054395

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spelling	doaj-99193bbad9164c628109f393959847292020-11-25T02:51:57ZengAIP Publishing LLCAPL Materials2166-532X2019-02-0172022522022522-610.1063/1.5054395026992APMThe electronic structure of ε-Ga2O3M. Mulazzi0F. Reichmann1A. Becker2W. M. Klesse3P. Alippi4V. Fiorentini5A. Parisini6M. Bosi7R. Fornari8Institut für Physik, Humboldt-Universität zu Berlin, Newtonstr. 15, D-12489 Berlin, GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyIHP, Im Technologiepark 25, D-15236 Frankfurt (Oder), GermanyCNR-ISM, Via Salaria km 29,300, I-00015 Monterotondo Stazione (Rome), ItalyDepartment of Physics, Cagliari University, I-09042 Monserrato (CA), ItalyDepartment of Mathematical, Physical and Computer Sciences, Parma University, Viale delle Scienze 7/A, I-43124 Parma, ItalyCNR, Institute of Electronic and Magnetic Materials, Viale delle Scienze 37/A, I-43124 Parma, ItalyDepartment of Mathematical, Physical and Computer Sciences, Parma University, Viale delle Scienze 7/A, I-43124 Parma, ItalyThe electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.http://dx.doi.org/10.1063/1.5054395
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari
spellingShingle	M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari The electronic structure of ε-Ga2O3 APL Materials
author_facet	M. Mulazzi F. Reichmann A. Becker W. M. Klesse P. Alippi V. Fiorentini A. Parisini M. Bosi R. Fornari
author_sort	M. Mulazzi
title	The electronic structure of ε-Ga2O3
title_short	The electronic structure of ε-Ga2O3
title_full	The electronic structure of ε-Ga2O3
title_fullStr	The electronic structure of ε-Ga2O3
title_full_unstemmed	The electronic structure of ε-Ga2O3
title_sort	electronic structure of ε-ga2o3
publisher	AIP Publishing LLC
series	APL Materials
issn	2166-532X
publishDate	2019-02-01
description	The electronic structure of ε-Ga2O3 thin films has been investigated by ab initio calculations and photoemission spectroscopy with UV, soft, and hard X-rays to probe the surface and bulk properties. The latter measurements reveal a peculiar satellite structure in the Ga 2p core level spectrum, absent at the surface, and a core-level broadening that can be attributed to photoelectron recoil. The photoemission experiments indicate that the energy separation between the valence band and the Fermi level is about 4.4 eV, a valence band maximum at the Γ point and an effective mass of the highest lying bands of – 4.2 free electron masses. The value of the bandgap compares well with that obtained by optical experiments and with that obtained by calculations performed using a hybrid density-functional, which also reproduce well the dispersion and density of states.
url	http://dx.doi.org/10.1063/1.5054395
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The electronic structure of ε-Ga2O3

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