Structural and Optical Properties of Chemical Bath Deposited CuIn(S,Se)2 Thin Films

• Main Authors: R. H. Bari, L. A. Patil
• Format: Article
• Language: English
• Published: IFSA Publishing, S.L. 2006-10-01
• Series: Sensors & Transducers
• Subjects: CuIn(S; Deposition parameter; Composition; Grain size; Band gap energy; Thin films CuIn(S.Se)2
• Online Access: http://www.sensorsportal.com/HTML/DIGEST/october_06/P_94.pdf

Thin films of CuIn(S, Se)2 have been prepared by chemical bath deposition technique at 60o C on glass substrate. The deposition parameters such as pH, temperature and time have been optimized. All films were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray analysis (EDAX), and Absorption spectroscopy. The morphology of the CuIn(S, Se)2 was found to be nonstoichiometric. The set of films having different elemental compositions was prepared by varying Cu/In ratio from 1.86 to 12.15 (at %). The films with band gap energies varying from 1.15 eV to 1.54 eV were synthesized by varying composition.