New Results on the Noise Figure of HEMTs
In this communication, an accurate mathematical model for the noise figure of a high electron mobility transistor is developed. This model represents a substantial improvement of the Fukui model. In fact, the Fukui approach can be considered as an approximation of our model under certain conditions....
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
1993-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/1993/74525 |
| Summary: | In this communication, an accurate mathematical model for the noise figure of a high electron mobility
transistor is developed. This model represents a substantial improvement of the Fukui model. In fact,
the Fukui approach can be considered as an approximation of our model under certain conditions.
The fundamental relationship that gives minimum noise figure is derived from a first-order linear
partial differential equation, which is established by assuming reasonable statements based on experience. |
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| ISSN: | 0882-7516 1563-5031 |