Silicon Carbide Converters and MEMS Devices for High-temperature Power Electronics: A Critical Review

• Main Authors: Xiaorui Guo, Qian Xun, Zuxin Li, Shuxin Du
• Format: Article
• Language: English
• Published: MDPI AG 2019-06-01
• Series: Micromachines
• Subjects: power electronics; high-temperature converters; MEMS devices; SiC power electronic devices
• Online Access: https://www.mdpi.com/2072-666X/10/6/406

The significant advance of power electronics in today’s market is calling for high-performance power conversion systems and MEMS devices that can operate reliably in harsh environments, such as high working temperature. Silicon-carbide (SiC) power electronic devices are featured by the high junction temperature, low power losses, and excellent thermal stability, and thus are attractive to converters and MEMS devices applied in a high-temperature environment. This paper conducts an overview of high-temperature power electronics, with a focus on high-temperature converters and MEMS devices. The critical components, namely SiC power devices and modules, gate drives, and passive components, are introduced and comparatively analyzed regarding composition material, physical structure, and packaging technology. Then, the research and development directions of SiC-based high-temperature converters in the fields of motor drives, rectifier units, DC−DC converters are discussed, as well as MEMS devices. Finally, the existing technical challenges facing high-temperature power electronics are identified, including gate drives, current measurement, parameters matching between each component, and packaging technology.