Electrical Compact Modeling of Graphene Base Transistors

Electrical Compact Modeling of Graphene Base Transistors

Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compati...

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Bibliographic Details
Main Authors: Sébastien Frégonèse, Stefano Venica, Francesco Driussi, Thomas Zimmer
Format: Article
Language:English
Published: MDPI AG 2015-11-01
Series:Electronics
Subjects:
graphene
transistor
GBT
circuit
compact
SPICE
electrical
model
large signal
Online Access:http://www.mdpi.com/2079-9292/4/4/969
Description
Summary:Following the recent development of the Graphene Base Transistor (GBT), a new electrical compact model for GBT devices is proposed. The transistor model includes the quantum capacitance model to obtain a self-consistent base potential. It also uses a versatile transfer current equation to be compatible with the different possible GBT configurations and it account for high injection conditions thanks to a transit time based charge model. Finally, the developed large signal model has been implemented in Verilog-A code and can be used for simulation in a standard circuit design environment such as Cadence or ADS. This model has been verified using advanced numerical simulation.
ISSN:2079-9292

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