A Standard CMOS Humidity Sensor without Post-Processing
A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 hu...
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doaj-9b9ef002856048058f683b35ec560b602020-11-25T00:25:44ZengMDPI AGSensors1424-82202011-06-011166197620210.3390/s110606197A Standard CMOS Humidity Sensor without Post-ProcessingOleg NizhnikKazusuke MaenakaKohei HiguchiA 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.http://www.mdpi.com/1424-8220/11/6/6197/capacitive sensorsmicrosensorshumidity measurementCMOS integrated circuits |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Oleg Nizhnik Kazusuke Maenaka Kohei Higuchi |
spellingShingle |
Oleg Nizhnik Kazusuke Maenaka Kohei Higuchi A Standard CMOS Humidity Sensor without Post-Processing Sensors capacitive sensors microsensors humidity measurement CMOS integrated circuits |
author_facet |
Oleg Nizhnik Kazusuke Maenaka Kohei Higuchi |
author_sort |
Oleg Nizhnik |
title |
A Standard CMOS Humidity Sensor without Post-Processing |
title_short |
A Standard CMOS Humidity Sensor without Post-Processing |
title_full |
A Standard CMOS Humidity Sensor without Post-Processing |
title_fullStr |
A Standard CMOS Humidity Sensor without Post-Processing |
title_full_unstemmed |
A Standard CMOS Humidity Sensor without Post-Processing |
title_sort |
standard cmos humidity sensor without post-processing |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2011-06-01 |
description |
A 2 µW power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023-10 humidity-sensitive layer, and a CMOS capacitance to voltage converter. |
topic |
capacitive sensors microsensors humidity measurement CMOS integrated circuits |
url |
http://www.mdpi.com/1424-8220/11/6/6197/ |
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