Oxidation-boosted charge trapping in ultra-sensitive van der Waals materials for artificial synaptic features
Developing efficient memory and artificial synaptic systems based on environmentally sensitive van der Waals materials remains a challenge. Here, the authors present a native oxidation-inspired InSe field-effect transistor that benefits from a boosted charge trapping behavior under ambient condition...
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Bibliographic Details
| Main Authors: |
Feng-Shou Yang,
Mengjiao Li,
Mu-Pai Lee,
I-Ying Ho,
Jiann-Yeu Chen,
Haifeng Ling,
Yuanzhe Li,
Jen-Kuei Chang,
Shih-Hsien Yang,
Yuan-Ming Chang,
Ko-Chun Lee,
Yi-Chia Chou,
Ching-Hwa Ho,
Wenwu Li,
Chen-Hsin Lien,
Yen-Fu Lin |
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| Format: | Article
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| Language: | English |
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| Published: |
Nature Publishing Group
2020-06-01
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| Series: | Nature Communications
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| Online Access: | https://doi.org/10.1038/s41467-020-16766-9
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