Heterostructure Ge-Body pTFETs for Analog/RF Applications
This article presents a systematic study on the analog and radio-frequency (RF) performance of type-II staggered heterostructure p-channel tunnel field-effect transistors (pTFETs) with Ge (Germanium) channel and different compound semiconductor source. In order to study the figure-of-merits (FOMs) o...
Main Authors: | Sayani Ghosh, Kalyan Koley, Samar K. Saha, Chandan K. Sarkar |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9201488/ |
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