First Evidence of Temporary Read Errors in TLC 3D-NAND Flash Memories Exiting From an Idle State
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first after a sequence of program/verify and a idle rete...
Main Authors: | Cristian Zambelli, Rino Micheloni, Salvatrice Scommegna, Piero Olivo |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8956089/ |
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