Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface
The primary problem that must be overcome when preparing high-performance SiC/Al composites for electronic packaging is how to effectively suppress the harmful SiC/Al interfacial reaction and thereby optimize interface bonding. Preoxidation of the SiC surface is an efficient and widely used method f...
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doaj-a01793837b1f4e2bb444c8c29dffe2e72021-09-05T04:40:39ZengElsevierJournal of Materials Research and Technology2238-78542021-11-011511001114Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interfaceHaotian Tong0Rui Zuo1Dong Qiu2Xin Li3Feng Qiu4State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun 130025, PR China; Key Laboratory of Automobile Materials, Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, PR ChinaKey Laboratory of Automobile Materials, Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, PR ChinaSchool of Engineering, RMIT University, 115 Queensberry Street, Carlton, Victoria 3053, AustraliaKey Laboratory of Automobile Materials, Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, PR China; Corresponding author.State Key Laboratory of Automotive Simulation and Control, Jilin University, Changchun 130025, PR China; Key Laboratory of Automobile Materials, Ministry of Education and Department of Materials Science and Engineering, Jilin University, Changchun 130025, PR ChinaThe primary problem that must be overcome when preparing high-performance SiC/Al composites for electronic packaging is how to effectively suppress the harmful SiC/Al interfacial reaction and thereby optimize interface bonding. Preoxidation of the SiC surface is an efficient and widely used method for this purpose. In this study, impregnation and inconsecutive oxidation methods were used to investigate the interfacial reaction between pure Al and SiC that was preoxidized under different conditions. The thickness of the oxide film that formed on the surface of SiC increased when the oxidation temperature was increased or when the oxidation time was extended. The protection of the oxide film isolated the SiC from the molten Al, and the SiC/Al interfacial reaction was effectively suppressed. In the alloy system containing Mg, the formation ratio of Al4C3 to MgAl2O4 at the interface was related to the thickness of the oxide film. The mechanism of the interfacial reaction was analyzed to obtain a theoretical and experimental basis for the preparation of SiC/Al composites to improve their comprehensive properties.http://www.sciencedirect.com/science/article/pii/S2238785421008280SiC/Al interfaceElectronic packagingInterfacial reactionPreoxidized |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Haotian Tong Rui Zuo Dong Qiu Xin Li Feng Qiu |
spellingShingle |
Haotian Tong Rui Zuo Dong Qiu Xin Li Feng Qiu Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface Journal of Materials Research and Technology SiC/Al interface Electronic packaging Interfacial reaction Preoxidized |
author_facet |
Haotian Tong Rui Zuo Dong Qiu Xin Li Feng Qiu |
author_sort |
Haotian Tong |
title |
Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface |
title_short |
Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface |
title_full |
Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface |
title_fullStr |
Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface |
title_full_unstemmed |
Interfacial reaction behavior and evolution mechanism at a preoxidized SiCox/Al interface |
title_sort |
interfacial reaction behavior and evolution mechanism at a preoxidized sicox/al interface |
publisher |
Elsevier |
series |
Journal of Materials Research and Technology |
issn |
2238-7854 |
publishDate |
2021-11-01 |
description |
The primary problem that must be overcome when preparing high-performance SiC/Al composites for electronic packaging is how to effectively suppress the harmful SiC/Al interfacial reaction and thereby optimize interface bonding. Preoxidation of the SiC surface is an efficient and widely used method for this purpose. In this study, impregnation and inconsecutive oxidation methods were used to investigate the interfacial reaction between pure Al and SiC that was preoxidized under different conditions. The thickness of the oxide film that formed on the surface of SiC increased when the oxidation temperature was increased or when the oxidation time was extended. The protection of the oxide film isolated the SiC from the molten Al, and the SiC/Al interfacial reaction was effectively suppressed. In the alloy system containing Mg, the formation ratio of Al4C3 to MgAl2O4 at the interface was related to the thickness of the oxide film. The mechanism of the interfacial reaction was analyzed to obtain a theoretical and experimental basis for the preparation of SiC/Al composites to improve their comprehensive properties. |
topic |
SiC/Al interface Electronic packaging Interfacial reaction Preoxidized |
url |
http://www.sciencedirect.com/science/article/pii/S2238785421008280 |
work_keys_str_mv |
AT haotiantong interfacialreactionbehaviorandevolutionmechanismatapreoxidizedsicoxalinterface AT ruizuo interfacialreactionbehaviorandevolutionmechanismatapreoxidizedsicoxalinterface AT dongqiu interfacialreactionbehaviorandevolutionmechanismatapreoxidizedsicoxalinterface AT xinli interfacialreactionbehaviorandevolutionmechanismatapreoxidizedsicoxalinterface AT fengqiu interfacialreactionbehaviorandevolutionmechanismatapreoxidizedsicoxalinterface |
_version_ |
1717814554627407872 |