Investigation of V<sub>1-x</sub>Ti<sub>x</sub>FeSb Semiconductor Solid Solution. II. Peculiarities of Crystal and Electronic Structure
The peculiarities of the crystal and electronic structure of V<sub>1-x</sub>Ti<sub>x</sub>FeSb, х = 0 – 0,20, semiconductor solid solution were investigated. The mechanism of generation of structural defects of acceptor and donor nature is described. In particular the nature...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Vasyl Stefanyk Precarpathian National University
2016-10-01
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| Series: | Фізика і хімія твердого тіла |
| Online Access: | http://journals.pu.if.ua/index.php/pcss/article/view/756 |
| Summary: | The peculiarities of the crystal and electronic structure of V<sub>1-x</sub>Ti<sub>x</sub>FeSb, х = 0 – 0,20, semiconductor solid solution were investigated. The mechanism of generation of structural defects of acceptor and donor nature is described. In particular the nature of donors in n-VFeSb was established (“a priori doping”) as a result of presence ofvacancies in Sb atomic site (4b). The obtained result lays in the basis of the technology for obtaining thermoelectric materials based on n-VFeSb with maximal efficiency of thermal to electrical energy conversion. <br /><strong>Keywords:</strong> semiconductor, electrical conduction, electronic structure. |
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| ISSN: | 1729-4428 2309-8589 |