Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/<i>p</i>-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/<i>p</i>-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

The diffusion welding (DW) is a comprehensive mechanism that can be extensively used to develop silicon carbide (SiC) Schottky rectifiers as a cheaper alternative to existing mainstream contact forming technologies. In this work, the Schottky barrier diode (SBD) fabricated by depositing Al-Foil on t...

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Bibliographic Details
Main Authors: Mehadi Hasan Ziko, Ants Koel, Toomas Rang, Muhammad Haroon Rashid
Format: Article
Language:English
Published: MDPI AG 2020-07-01
Series:Crystals
Subjects:
<i>p</i>-type 4H-SiC
diffusion welding
inhomogeneity
Schottky barrier diode
barrier height
ideality factor
Online Access:https://www.mdpi.com/2073-4352/10/8/636

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