Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process
The ferroelectric HfO2 thin film has attracted a lot of research interest due to being Pb free and its excellent compatibility with the Si-based semiconductor process. However, methods to obtain thicker HfO2 thin films with strong ferroelectricity have yet to be explored. In this work, a 50 nm-thick...
Main Authors: | , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-08-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0013511 |