Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process

Excellent ferroelectricity of 50 nm-thick doped HfO2 thin films induced by annealing with a rapid-heating-temperature process

The ferroelectric HfO2 thin film has attracted a lot of research interest due to being Pb free and its excellent compatibility with the Si-based semiconductor process. However, methods to obtain thicker HfO2 thin films with strong ferroelectricity have yet to be explored. In this work, a 50 nm-thick...

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Bibliographic Details
Main Authors:	Zhiyong Quan, Meimei Wang, Xiao Zhang, Huihui Liu, Wei Zhang, Xiaohong Xu
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2020-08-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/5.0013511

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