Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range

This paper presents an improved radio frequency small-signal equivalent circuit model of deep nanometer fin field-effect transistors (FinFETs) with a 3-D device simulator. A novel parameter extraction method is proposed based on the nonlinear rational function fitting. The extrinsic gate-to-drain/so...

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Bibliographic Details
Main Authors: Muyang Qin, Yabin Sun, Xiaojin Li, Yanling Shi
Format: Article
Language:English
Published: IEEE 2018-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8331849/