Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range
This paper presents an improved radio frequency small-signal equivalent circuit model of deep nanometer fin field-effect transistors (FinFETs) with a 3-D device simulator. A novel parameter extraction method is proposed based on the nonlinear rational function fitting. The extrinsic gate-to-drain/so...
Main Authors: | Muyang Qin, Yabin Sun, Xiaojin Li, Yanling Shi |
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Format: | Article |
Language: | English |
Published: |
IEEE
2018-01-01
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Series: | IEEE Access |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8331849/ |
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