Effect of the Blocking Oxide Layer With Asymmetric Taper Angles in 3-D NAND Flash Memories
The tapered channel effect is a major concern in three-dimensional (3-D) NAND technology because the effect causes differences in the electrical characteristics, including the threshold voltage (V<sub>T</sub>), between the upper and the lower cells. We simulated the tapered channel effec...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9514533/ |