Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon
Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-02-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/10/2/189 |