Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

Abnormal Output Characteristics of p-Type Low Temperature Polycrystalline Silicon Thin Film Transistor Fabricated on Polyimide Substrate

We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnorm...

Full description

Bibliographic Details
Main Authors: Seok-Woo Lee, Chang Bum Park, Pyo Jin Jeon, Sung-Wook Min, June Yeong Lim, Han Sol Lee, Jae-Sung Yoo, Soon Sung Yoo, Seongil Im
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thin-film transistor (TFT),
LTPS
self-heating effect
hot carrier effect
polyimide (PI)
flexible
Online Access:https://ieeexplore.ieee.org/document/7302517/
Description
Summary:We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.
ISSN:2168-6734

Similar Items